N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes

Yu Wu Wang, Chen Hsiang Yen, Wei Yang Chou, Shyh Jiun Liu, Horng Long Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, device characterization and carrier transport properties of n-type fluorinated copper phthalocyanine (F16CuPc) organic thin-film transistors (OTFTs) were investigated using bottom gate device configuration with oxygen plasma-treatment indium-tin-oxide (ITO) bottom source and drain (S/D) contact. We fabricated F16CuPc-based OTFTs having comb-shaped channels with a series of channel lengths of 5~100 μm at a fixed channel width. The electrical characteristics of OTFTs were measured by a Keithley 4200-SCS semiconductor parameter analyzer in a dark glove box in a nitrogen atmosphere to avoid the influence of measuring environments. The device characteristics were analyzed using the charge-sheet metal-oxide-semiconductor field-effect transistor model equation. We found that both the linear and saturation field-effect mobilities and threshold voltages of F 16CuPc-based OTFTs increased with increasing channel length. The linear and saturated field-effect mobilities were gate-bias dependent in all devices with different channel dimensions. Moreover, the contact resistance between ITO S/D electrodes and F16CuPc and channel resistance of F16CuPc were investigated using the gated-transfer length method. The results of our experiments suggest that the contact resistance between ITO electrodes and F16CuPc plays an important role in current-voltage characteristics. Additionally, abnormal increases in saturated field-effect mobility at channel lengths below 10 μm were observed in our experimental devices and were attributed to short channel effects. Such non-ideal effects of the present F16CuPc-based OTFT devices were investigated in detail. In summary, we found that the oxygen-plasma-treatment ITO bottom contact S/D electrode-based F16CuPc OTFT devices were very durable and suitable to make large area transistor arrays with complicated integrated circuits by photolithography techniques.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics
DOIs
Publication statusPublished - 2008 Nov 12
EventOrganic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics - San Diego, CA, United States
Duration: 2008 Aug 102008 Aug 12

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7054
ISSN (Print)0277-786X

Other

OtherOrganic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics
CountryUnited States
CitySan Diego, CA
Period08-08-1008-08-12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Wang, Y. W., Yen, C. H., Chou, W. Y., Liu, S. J., & Cheng, H. L. (2008). N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes. In Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics [705416] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7054). https://doi.org/10.1117/12.793662