N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes

Yu Wu Wang, Chen Hsiang Yen, Wei Yang Chou, Shyh Jiun Liu, Horng Long Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, device characterization and carrier transport properties of n-type fluorinated copper phthalocyanine (F16CuPc) organic thin-film transistors (OTFTs) were investigated using bottom gate device configuration with oxygen plasma-treatment indium-tin-oxide (ITO) bottom source and drain (S/D) contact. We fabricated F16CuPc-based OTFTs having comb-shaped channels with a series of channel lengths of 5~100 μm at a fixed channel width. The electrical characteristics of OTFTs were measured by a Keithley 4200-SCS semiconductor parameter analyzer in a dark glove box in a nitrogen atmosphere to avoid the influence of measuring environments. The device characteristics were analyzed using the charge-sheet metal-oxide-semiconductor field-effect transistor model equation. We found that both the linear and saturation field-effect mobilities and threshold voltages of F 16CuPc-based OTFTs increased with increasing channel length. The linear and saturated field-effect mobilities were gate-bias dependent in all devices with different channel dimensions. Moreover, the contact resistance between ITO S/D electrodes and F16CuPc and channel resistance of F16CuPc were investigated using the gated-transfer length method. The results of our experiments suggest that the contact resistance between ITO electrodes and F16CuPc plays an important role in current-voltage characteristics. Additionally, abnormal increases in saturated field-effect mobility at channel lengths below 10 μm were observed in our experimental devices and were attributed to short channel effects. Such non-ideal effects of the present F16CuPc-based OTFT devices were investigated in detail. In summary, we found that the oxygen-plasma-treatment ITO bottom contact S/D electrode-based F16CuPc OTFT devices were very durable and suitable to make large area transistor arrays with complicated integrated circuits by photolithography techniques.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics
DOIs
Publication statusPublished - 2008 Nov 12
EventOrganic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics - San Diego, CA, United States
Duration: 2008 Aug 102008 Aug 12

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7054
ISSN (Print)0277-786X

Other

OtherOrganic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics
CountryUnited States
CitySan Diego, CA
Period08-08-1008-08-12

Fingerprint

Phthalocyanine
Thin-film Transistor
oxygen plasma
Thin film transistors
Tin oxides
Copper
indium oxides
Indium
tin oxides
Electrode
Oxides
Oxygen
transistors
Plasma
Plasmas
copper
Electrodes
electrodes
thin films
Contact Resistance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Wang, Y. W., Yen, C. H., Chou, W. Y., Liu, S. J., & Cheng, H. L. (2008). N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes. In Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics [705416] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7054). https://doi.org/10.1117/12.793662
Wang, Yu Wu ; Yen, Chen Hsiang ; Chou, Wei Yang ; Liu, Shyh Jiun ; Cheng, Horng Long. / N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes. Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics. 2008. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{86714d1b58de4dbda31bc6df0611d742,
title = "N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes",
abstract = "In this study, device characterization and carrier transport properties of n-type fluorinated copper phthalocyanine (F16CuPc) organic thin-film transistors (OTFTs) were investigated using bottom gate device configuration with oxygen plasma-treatment indium-tin-oxide (ITO) bottom source and drain (S/D) contact. We fabricated F16CuPc-based OTFTs having comb-shaped channels with a series of channel lengths of 5~100 μm at a fixed channel width. The electrical characteristics of OTFTs were measured by a Keithley 4200-SCS semiconductor parameter analyzer in a dark glove box in a nitrogen atmosphere to avoid the influence of measuring environments. The device characteristics were analyzed using the charge-sheet metal-oxide-semiconductor field-effect transistor model equation. We found that both the linear and saturation field-effect mobilities and threshold voltages of F 16CuPc-based OTFTs increased with increasing channel length. The linear and saturated field-effect mobilities were gate-bias dependent in all devices with different channel dimensions. Moreover, the contact resistance between ITO S/D electrodes and F16CuPc and channel resistance of F16CuPc were investigated using the gated-transfer length method. The results of our experiments suggest that the contact resistance between ITO electrodes and F16CuPc plays an important role in current-voltage characteristics. Additionally, abnormal increases in saturated field-effect mobility at channel lengths below 10 μm were observed in our experimental devices and were attributed to short channel effects. Such non-ideal effects of the present F16CuPc-based OTFT devices were investigated in detail. In summary, we found that the oxygen-plasma-treatment ITO bottom contact S/D electrode-based F16CuPc OTFT devices were very durable and suitable to make large area transistor arrays with complicated integrated circuits by photolithography techniques.",
author = "Wang, {Yu Wu} and Yen, {Chen Hsiang} and Chou, {Wei Yang} and Liu, {Shyh Jiun} and Cheng, {Horng Long}",
year = "2008",
month = "11",
day = "12",
doi = "10.1117/12.793662",
language = "English",
isbn = "9780819472748",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics",

}

Wang, YW, Yen, CH, Chou, WY, Liu, SJ & Cheng, HL 2008, N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes. in Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics., 705416, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7054, Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics, San Diego, CA, United States, 08-08-10. https://doi.org/10.1117/12.793662

N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes. / Wang, Yu Wu; Yen, Chen Hsiang; Chou, Wei Yang; Liu, Shyh Jiun; Cheng, Horng Long.

Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics. 2008. 705416 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7054).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes

AU - Wang, Yu Wu

AU - Yen, Chen Hsiang

AU - Chou, Wei Yang

AU - Liu, Shyh Jiun

AU - Cheng, Horng Long

PY - 2008/11/12

Y1 - 2008/11/12

N2 - In this study, device characterization and carrier transport properties of n-type fluorinated copper phthalocyanine (F16CuPc) organic thin-film transistors (OTFTs) were investigated using bottom gate device configuration with oxygen plasma-treatment indium-tin-oxide (ITO) bottom source and drain (S/D) contact. We fabricated F16CuPc-based OTFTs having comb-shaped channels with a series of channel lengths of 5~100 μm at a fixed channel width. The electrical characteristics of OTFTs were measured by a Keithley 4200-SCS semiconductor parameter analyzer in a dark glove box in a nitrogen atmosphere to avoid the influence of measuring environments. The device characteristics were analyzed using the charge-sheet metal-oxide-semiconductor field-effect transistor model equation. We found that both the linear and saturation field-effect mobilities and threshold voltages of F 16CuPc-based OTFTs increased with increasing channel length. The linear and saturated field-effect mobilities were gate-bias dependent in all devices with different channel dimensions. Moreover, the contact resistance between ITO S/D electrodes and F16CuPc and channel resistance of F16CuPc were investigated using the gated-transfer length method. The results of our experiments suggest that the contact resistance between ITO electrodes and F16CuPc plays an important role in current-voltage characteristics. Additionally, abnormal increases in saturated field-effect mobility at channel lengths below 10 μm were observed in our experimental devices and were attributed to short channel effects. Such non-ideal effects of the present F16CuPc-based OTFT devices were investigated in detail. In summary, we found that the oxygen-plasma-treatment ITO bottom contact S/D electrode-based F16CuPc OTFT devices were very durable and suitable to make large area transistor arrays with complicated integrated circuits by photolithography techniques.

AB - In this study, device characterization and carrier transport properties of n-type fluorinated copper phthalocyanine (F16CuPc) organic thin-film transistors (OTFTs) were investigated using bottom gate device configuration with oxygen plasma-treatment indium-tin-oxide (ITO) bottom source and drain (S/D) contact. We fabricated F16CuPc-based OTFTs having comb-shaped channels with a series of channel lengths of 5~100 μm at a fixed channel width. The electrical characteristics of OTFTs were measured by a Keithley 4200-SCS semiconductor parameter analyzer in a dark glove box in a nitrogen atmosphere to avoid the influence of measuring environments. The device characteristics were analyzed using the charge-sheet metal-oxide-semiconductor field-effect transistor model equation. We found that both the linear and saturation field-effect mobilities and threshold voltages of F 16CuPc-based OTFTs increased with increasing channel length. The linear and saturated field-effect mobilities were gate-bias dependent in all devices with different channel dimensions. Moreover, the contact resistance between ITO S/D electrodes and F16CuPc and channel resistance of F16CuPc were investigated using the gated-transfer length method. The results of our experiments suggest that the contact resistance between ITO electrodes and F16CuPc plays an important role in current-voltage characteristics. Additionally, abnormal increases in saturated field-effect mobility at channel lengths below 10 μm were observed in our experimental devices and were attributed to short channel effects. Such non-ideal effects of the present F16CuPc-based OTFT devices were investigated in detail. In summary, we found that the oxygen-plasma-treatment ITO bottom contact S/D electrode-based F16CuPc OTFT devices were very durable and suitable to make large area transistor arrays with complicated integrated circuits by photolithography techniques.

UR - http://www.scopus.com/inward/record.url?scp=55549109059&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55549109059&partnerID=8YFLogxK

U2 - 10.1117/12.793662

DO - 10.1117/12.793662

M3 - Conference contribution

AN - SCOPUS:55549109059

SN - 9780819472748

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics

ER -

Wang YW, Yen CH, Chou WY, Liu SJ, Cheng HL. N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes. In Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics. 2008. 705416. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.793662