Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions

Yen Kuang Kuo, Ya Hsuan Shih, Jih Yuan Chang, Wei Chih Lai, Heng Liu, Fang Ming Chen, Ming Lun Lee, Jinn Kong Sheu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80% enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.

Original languageEnglish
Pages (from-to)A777-A784
JournalOptics Express
Volume25
Issue number16
DOIs
Publication statusPublished - 2017 Aug 7

Fingerprint

tunnel junctions
light emitting diodes
polarization
electric potential
diagrams
electric current
energy bands
costs
electric fields
augmentation
output
photons
curves
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Kuo, Yen Kuang ; Shih, Ya Hsuan ; Chang, Jih Yuan ; Lai, Wei Chih ; Liu, Heng ; Chen, Fang Ming ; Lee, Ming Lun ; Sheu, Jinn Kong. / Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions. In: Optics Express. 2017 ; Vol. 25, No. 16. pp. A777-A784.
@article{ae85d102adb94784a4d76e80a62bfb43,
title = "Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions",
abstract = "Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80{\%} enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.",
author = "Kuo, {Yen Kuang} and Shih, {Ya Hsuan} and Chang, {Jih Yuan} and Lai, {Wei Chih} and Heng Liu and Chen, {Fang Ming} and Lee, {Ming Lun} and Sheu, {Jinn Kong}",
year = "2017",
month = "8",
day = "7",
doi = "10.1364/OE.25.00A777",
language = "English",
volume = "25",
pages = "A777--A784",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "16",

}

Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions. / Kuo, Yen Kuang; Shih, Ya Hsuan; Chang, Jih Yuan; Lai, Wei Chih; Liu, Heng; Chen, Fang Ming; Lee, Ming Lun; Sheu, Jinn Kong.

In: Optics Express, Vol. 25, No. 16, 07.08.2017, p. A777-A784.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions

AU - Kuo, Yen Kuang

AU - Shih, Ya Hsuan

AU - Chang, Jih Yuan

AU - Lai, Wei Chih

AU - Liu, Heng

AU - Chen, Fang Ming

AU - Lee, Ming Lun

AU - Sheu, Jinn Kong

PY - 2017/8/7

Y1 - 2017/8/7

N2 - Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80% enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.

AB - Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80% enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.

UR - http://www.scopus.com/inward/record.url?scp=85027862267&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027862267&partnerID=8YFLogxK

U2 - 10.1364/OE.25.00A777

DO - 10.1364/OE.25.00A777

M3 - Article

AN - SCOPUS:85027862267

VL - 25

SP - A777-A784

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 16

ER -