Modification of the electrical properties of poly(3,4- ethylenedioxythiophene) doped with poly(4-styrenesulfonate) upon doping of ZnO nanoparticles of different content

Yow-Jon Lin, Yu Chao Su

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

A photocurrent decay model is presented that addresses the charge trapping and doping mechanisms for composite poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films having ZnO nanoparticles of different contents. It is shown that ZnO doping introduced changes in the chemical structure of PEDOT:PSS. Dark current proportional to ZnO doping was observed. For n-type Si/ZnO-doped PEDOT:PSS devices, the high photocurrent density originates from efficient hole transport combined with long-lifetime electron trapping.

Original languageEnglish
Article number073712
JournalJournal of Applied Physics
Volume111
Issue number7
DOIs
Publication statusPublished - 2012 Apr 1

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electrical properties
nanoparticles
photocurrents
trapping
dark current
life (durability)
composite materials
decay
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "A photocurrent decay model is presented that addresses the charge trapping and doping mechanisms for composite poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films having ZnO nanoparticles of different contents. It is shown that ZnO doping introduced changes in the chemical structure of PEDOT:PSS. Dark current proportional to ZnO doping was observed. For n-type Si/ZnO-doped PEDOT:PSS devices, the high photocurrent density originates from efficient hole transport combined with long-lifetime electron trapping.",
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AB - A photocurrent decay model is presented that addresses the charge trapping and doping mechanisms for composite poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films having ZnO nanoparticles of different contents. It is shown that ZnO doping introduced changes in the chemical structure of PEDOT:PSS. Dark current proportional to ZnO doping was observed. For n-type Si/ZnO-doped PEDOT:PSS devices, the high photocurrent density originates from efficient hole transport combined with long-lifetime electron trapping.

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