Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH4)2Sx-treated indium-tin oxide substrates

Yow Jon Lin, Chang Feng You, Wei Yang Chou, Shih Ting Lin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Photoelectron spectroscopy measurements show that (NH4) 2Sx surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (VO) by sulfur and a reduction in the amount of VO near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH4)2Sx treatment, shows that (NH4)2Sx treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of VO-related defects near the ITO surface region).

Original languageEnglish
Pages (from-to)G302-G304
JournalElectrochemical and Solid-State Letters
Volume9
Issue number10
DOIs
Publication statusPublished - 2006 Aug 29

Fingerprint

Tin oxides
indium oxides
Indium
tin oxides
Light emitting diodes
Polymers
light emitting diodes
polymers
Substrates
Oxygen vacancies
Photoelectron spectroscopy
luminance
surface treatment
Quantum efficiency
Sulfur
Leakage currents
occupation
Surface treatment
quantum efficiency
Luminance

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "Photoelectron spectroscopy measurements show that (NH4) 2Sx surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (VO) by sulfur and a reduction in the amount of VO near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH4)2Sx treatment, shows that (NH4)2Sx treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of VO-related defects near the ITO surface region).",
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Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH4)2Sx-treated indium-tin oxide substrates. / Lin, Yow Jon; You, Chang Feng; Chou, Wei Yang; Lin, Shih Ting.

In: Electrochemical and Solid-State Letters, Vol. 9, No. 10, 29.08.2006, p. G302-G304.

Research output: Contribution to journalArticle

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