Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH4)2Sx-treated indium-tin oxide substrates

Yow Jon Lin, Chang Feng You, Wei Yang Chou, Shih Ting Lin

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1 Citation (Scopus)

Abstract

Photoelectron spectroscopy measurements show that (NH4) 2Sx surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (VO) by sulfur and a reduction in the amount of VO near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH4)2Sx treatment, shows that (NH4)2Sx treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of VO-related defects near the ITO surface region).

Original languageEnglish
Pages (from-to)G302-G304
JournalElectrochemical and Solid-State Letters
Volume9
Issue number10
DOIs
Publication statusPublished - 2006 Aug 29

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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