Mechanisms of enhancing band-edge luminescence of Zn1-x Mg xO prepared by the sol-gel method

Yow-Jon Lin, Ping Hsun Wu, Chia Lung Tsai, Chia-Jyi Liu, Ching Ting Lee, Hsing Cheng Chang, Zhi Ru Lin, Kai Yi Jeng

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Zn1-xMgxO films prepared with different x were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, atomic force microscopy, photoluminescence and conductivity measurements were used to characterize the Zn1-xMg xO films. The yield in the intensity of the band-edge luminescence (BEL) is seen to increase up to 21-fold for Zn0.94Mg0.06O and up to 4-fold for Zn0.958Mg0.042O compared with the Zn0.973Mg0.027O film. The enhanced BEL intensity has been attributed to an increase in the nonradiative recombination lifetime, a reduction in the oxygen-vacancy related defects and a reduction in the refractive index of the Zn1-xMgxO film.

Original languageEnglish
Article number125103
JournalJournal of Physics D: Applied Physics
Volume41
Issue number12
DOIs
Publication statusPublished - 2008 Jun 21

Fingerprint

Sol-gel process
Luminescence
gels
luminescence
Oxygen vacancies
Sol-gels
Atomic force microscopy
Refractive index
Photoluminescence
x ray diffraction
X ray photoelectron spectroscopy
Diffraction
photoelectron spectroscopy
atomic force microscopy
refractivity
photoluminescence
X rays
life (durability)
conductivity
Defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Lin, Yow-Jon ; Wu, Ping Hsun ; Tsai, Chia Lung ; Liu, Chia-Jyi ; Lee, Ching Ting ; Chang, Hsing Cheng ; Lin, Zhi Ru ; Jeng, Kai Yi. / Mechanisms of enhancing band-edge luminescence of Zn1-x Mg xO prepared by the sol-gel method. In: Journal of Physics D: Applied Physics. 2008 ; Vol. 41, No. 12.
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Mechanisms of enhancing band-edge luminescence of Zn1-x Mg xO prepared by the sol-gel method. / Lin, Yow-Jon; Wu, Ping Hsun; Tsai, Chia Lung; Liu, Chia-Jyi; Lee, Ching Ting; Chang, Hsing Cheng; Lin, Zhi Ru; Jeng, Kai Yi.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 12, 125103, 21.06.2008.

Research output: Contribution to journalArticle

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AU - Lin, Yow-Jon

AU - Wu, Ping Hsun

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AU - Liu, Chia-Jyi

AU - Lee, Ching Ting

AU - Chang, Hsing Cheng

AU - Lin, Zhi Ru

AU - Jeng, Kai Yi

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AB - Zn1-xMgxO films prepared with different x were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, atomic force microscopy, photoluminescence and conductivity measurements were used to characterize the Zn1-xMg xO films. The yield in the intensity of the band-edge luminescence (BEL) is seen to increase up to 21-fold for Zn0.94Mg0.06O and up to 4-fold for Zn0.958Mg0.042O compared with the Zn0.973Mg0.027O film. The enhanced BEL intensity has been attributed to an increase in the nonradiative recombination lifetime, a reduction in the oxygen-vacancy related defects and a reduction in the refractive index of the Zn1-xMgxO film.

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