Abstract
Controlling the thickness of the interfacial MoSe2 layer in Cu2ZnSnSe4 (CZTS) thin film solar cells can have a profound impact on device performance. The Zn/Sn ratio in the absorber layer of CZTS solar cells significantly affects the thickness of MoSe2 after selenization; however, the underlying mechanism remains unknown. In this study, we employed a fast-cooling selenization system to study the phase transformation and analyzed the back side of the CZTS absorber layer to characterize the mechanism by which Zn/Sn ratio affects the thickness of the MoSe2 absorber layer. Experiments revealed the formation of various metal-selenide phases at the bottom of the CZTS absorber layer during selenization. At temperatures below 400 °C, this mainly involves Sn- and CuSn-selenides; above 450 °C, this mainly involves Cu- and Zn- selenides. Since MoSe2 grows significantly above 450 °C, Cu- and Zn-selenides are the main reasons for reducing the thickness of MoSe2. The fact that MoSe2 growth generally occurs above 450 °C means that a higher Zn/Sn ratio leads to the formation of more Zn-selenides, such that there is less Se available for the formation of MoSe2, resulting in a thinner layer.
| Original language | English |
|---|---|
| Pages (from-to) | 17540-17546 |
| Number of pages | 7 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 30 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2019 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Mechanism study of Zn/Sn ratio on the MoSe2 formation in Zn-rich Cu2ZnSnSe4 absorber layer. / Lin, Yi Cheng; Hsu, Ya Ru.
In: Journal of Materials Science: Materials in Electronics, Vol. 30, No. 19, 01.10.2019, p. 17540-17546.Research output: Contribution to journal › Article
TY - JOUR
T1 - Mechanism study of Zn/Sn ratio on the MoSe2 formation in Zn-rich Cu2ZnSnSe4 absorber layer
AU - Lin, Yi Cheng
AU - Hsu, Ya Ru
PY - 2019/10/1
Y1 - 2019/10/1
N2 - Controlling the thickness of the interfacial MoSe2 layer in Cu2ZnSnSe4 (CZTS) thin film solar cells can have a profound impact on device performance. The Zn/Sn ratio in the absorber layer of CZTS solar cells significantly affects the thickness of MoSe2 after selenization; however, the underlying mechanism remains unknown. In this study, we employed a fast-cooling selenization system to study the phase transformation and analyzed the back side of the CZTS absorber layer to characterize the mechanism by which Zn/Sn ratio affects the thickness of the MoSe2 absorber layer. Experiments revealed the formation of various metal-selenide phases at the bottom of the CZTS absorber layer during selenization. At temperatures below 400 °C, this mainly involves Sn- and CuSn-selenides; above 450 °C, this mainly involves Cu- and Zn- selenides. Since MoSe2 grows significantly above 450 °C, Cu- and Zn-selenides are the main reasons for reducing the thickness of MoSe2. The fact that MoSe2 growth generally occurs above 450 °C means that a higher Zn/Sn ratio leads to the formation of more Zn-selenides, such that there is less Se available for the formation of MoSe2, resulting in a thinner layer.
AB - Controlling the thickness of the interfacial MoSe2 layer in Cu2ZnSnSe4 (CZTS) thin film solar cells can have a profound impact on device performance. The Zn/Sn ratio in the absorber layer of CZTS solar cells significantly affects the thickness of MoSe2 after selenization; however, the underlying mechanism remains unknown. In this study, we employed a fast-cooling selenization system to study the phase transformation and analyzed the back side of the CZTS absorber layer to characterize the mechanism by which Zn/Sn ratio affects the thickness of the MoSe2 absorber layer. Experiments revealed the formation of various metal-selenide phases at the bottom of the CZTS absorber layer during selenization. At temperatures below 400 °C, this mainly involves Sn- and CuSn-selenides; above 450 °C, this mainly involves Cu- and Zn- selenides. Since MoSe2 grows significantly above 450 °C, Cu- and Zn-selenides are the main reasons for reducing the thickness of MoSe2. The fact that MoSe2 growth generally occurs above 450 °C means that a higher Zn/Sn ratio leads to the formation of more Zn-selenides, such that there is less Se available for the formation of MoSe2, resulting in a thinner layer.
UR - http://www.scopus.com/inward/record.url?scp=85073538790&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073538790&partnerID=8YFLogxK
U2 - 10.1007/s10854-019-02101-6
DO - 10.1007/s10854-019-02101-6
M3 - Article
AN - SCOPUS:85073538790
VL - 30
SP - 17540
EP - 17546
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 19
ER -