Abstract
The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) of a-plane GaN. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using TELOG. The low threading dislocation density investigated by transmission electron microscopy was estimated to be 3 × 107 cm-2 on the N-face GaN wing. According the results of μ-PL and CL, the threading dislocations are the strongly non-radiative center in a-plane GaN film. Finally, we concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film.
Original language | English |
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Pages (from-to) | 2519-2523 |
Number of pages | 5 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 4 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2007 Dec 1 |
Event | International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006 Oct 22 → 2006 Oct 27 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics