Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN

Te Chung Wang, Tien Chang Lu, Tsung Shine Ko, Hao Chung Kuo, Hou Guang Chen, Min Yu, Chang Cheng Chuo, Zheng Hong Lee, Sing Chung Wang

Research output: Contribution to journalConference article

Abstract

The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) of a-plane GaN. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using TELOG. The low threading dislocation density investigated by transmission electron microscopy was estimated to be 3 × 107 cm-2 on the N-face GaN wing. According the results of μ-PL and CL, the threading dislocations are the strongly non-radiative center in a-plane GaN film. Finally, we concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film.

Original languageEnglish
Pages (from-to)2519-2523
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
Publication statusPublished - 2007 Dec 1
EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
Duration: 2006 Oct 222006 Oct 27

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optical properties
plane strain
wings
crystals
seeds
sapphire
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Wang, Te Chung ; Lu, Tien Chang ; Ko, Tsung Shine ; Kuo, Hao Chung ; Chen, Hou Guang ; Yu, Min ; Chuo, Chang Cheng ; Lee, Zheng Hong ; Wang, Sing Chung. / Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2007 ; Vol. 4, No. 7. pp. 2519-2523.
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abstract = "The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) of a-plane GaN. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using TELOG. The low threading dislocation density investigated by transmission electron microscopy was estimated to be 3 × 107 cm-2 on the N-face GaN wing. According the results of μ-PL and CL, the threading dislocations are the strongly non-radiative center in a-plane GaN film. Finally, we concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film.",
author = "Wang, {Te Chung} and Lu, {Tien Chang} and Ko, {Tsung Shine} and Kuo, {Hao Chung} and Chen, {Hou Guang} and Min Yu and Chuo, {Chang Cheng} and Lee, {Zheng Hong} and Wang, {Sing Chung}",
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Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN. / Wang, Te Chung; Lu, Tien Chang; Ko, Tsung Shine; Kuo, Hao Chung; Chen, Hou Guang; Yu, Min; Chuo, Chang Cheng; Lee, Zheng Hong; Wang, Sing Chung.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 7, 01.12.2007, p. 2519-2523.

Research output: Contribution to journalConference article

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T1 - Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN

AU - Wang, Te Chung

AU - Lu, Tien Chang

AU - Ko, Tsung Shine

AU - Kuo, Hao Chung

AU - Chen, Hou Guang

AU - Yu, Min

AU - Chuo, Chang Cheng

AU - Lee, Zheng Hong

AU - Wang, Sing Chung

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Y1 - 2007/12/1

N2 - The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) of a-plane GaN. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using TELOG. The low threading dislocation density investigated by transmission electron microscopy was estimated to be 3 × 107 cm-2 on the N-face GaN wing. According the results of μ-PL and CL, the threading dislocations are the strongly non-radiative center in a-plane GaN film. Finally, we concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film.

AB - The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) of a-plane GaN. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using TELOG. The low threading dislocation density investigated by transmission electron microscopy was estimated to be 3 × 107 cm-2 on the N-face GaN wing. According the results of μ-PL and CL, the threading dislocations are the strongly non-radiative center in a-plane GaN film. Finally, we concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film.

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