Abstract
The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) of a-plane GaN. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using TELOG. The low threading dislocation density investigated by transmission electron microscopy was estimated to be 3 × 107 cm-2 on the N-face GaN wing. According the results of μ-PL and CL, the threading dislocations are the strongly non-radiative center in a-plane GaN film. Finally, we concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film.
| Original language | English |
|---|---|
| Pages (from-to) | 2519-2523 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 4 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
| Event | International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006 Oct 22 → 2006 Oct 27 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN. / Wang, Te Chung; Lu, Tien Chang; Ko, Tsung Shine; Kuo, Hao Chung; Chen, Hou Guang; Yu, Min; Chuo, Chang Cheng; Lee, Zheng Hong; Wang, Sing Chung.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 7, 01.12.2007, p. 2519-2523.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN
AU - Wang, Te Chung
AU - Lu, Tien Chang
AU - Ko, Tsung Shine
AU - Kuo, Hao Chung
AU - Chen, Hou Guang
AU - Yu, Min
AU - Chuo, Chang Cheng
AU - Lee, Zheng Hong
AU - Wang, Sing Chung
PY - 2007/12/1
Y1 - 2007/12/1
N2 - The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) of a-plane GaN. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using TELOG. The low threading dislocation density investigated by transmission electron microscopy was estimated to be 3 × 107 cm-2 on the N-face GaN wing. According the results of μ-PL and CL, the threading dislocations are the strongly non-radiative center in a-plane GaN film. Finally, we concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film.
AB - The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) of a-plane GaN. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using TELOG. The low threading dislocation density investigated by transmission electron microscopy was estimated to be 3 × 107 cm-2 on the N-face GaN wing. According the results of μ-PL and CL, the threading dislocations are the strongly non-radiative center in a-plane GaN film. Finally, we concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film.
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U2 - 10.1002/pssc.200674765
DO - 10.1002/pssc.200674765
M3 - Conference article
AN - SCOPUS:49749126719
VL - 4
SP - 2519
EP - 2523
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 7
ER -