Magnetoresistance fluctuations in a weak disorder indium nitride nanowire

Y. W. Su, K. Aravind, C. S. Wu, Watson Kuo, K. H. Chen, L. C. Chen, K. S. Chang-Liao, W. F. Su, C. D. Chen

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Abstract

We report measurements of magnetoresistance (MR) fluctuations in a weak disorder indium nitride nanowire. The MR fluctuations are reproducible, aperiodic and symmetric in magnetic field but are asymmetric upon reversal of bias direction. The fluctuations are analysed for both perpendicular and parallel external magnetic field configurations in the light of tunnel magnetoresistance at low field and impurity scattering at higher field. The asymmetry in bias reversal is caused by breakdown of time reversal symmetry.

Original languageEnglish
Article number185009
JournalJournal of Physics D: Applied Physics
Volume42
Issue number18
DOIs
Publication statusPublished - 2009 Sep 18

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Su, Y. W., Aravind, K., Wu, C. S., Kuo, W., Chen, K. H., Chen, L. C., Chang-Liao, K. S., Su, W. F., & Chen, C. D. (2009). Magnetoresistance fluctuations in a weak disorder indium nitride nanowire. Journal of Physics D: Applied Physics, 42(18), [185009]. https://doi.org/10.1088/0022-3727/42/18/185009