Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor

K. Aravind, M. C. Lin, I. L. Ho, C. S. Wu, Watson Kuo, C. H. Kuan, K. S. Chang-Liao, C. D. Chen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report fabrication, measurement and simulation of silicon single-electron-transistors made on silicon-on-insulator wafers. At T~2 K, these devices showed clear Coulomb blockade structures. An external perpendicular magnetic field was found to enhance the resonant tunneling peak and was used to predict the presence of two laterally coupled quantum dots in the narrow constriction between the source-drain electrodes. The proposed model and measured experimental data were consistently explained using numerical simulations.

Original languageEnglish
Pages (from-to)2509-2512
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number3
DOIs
Publication statusPublished - 2012 Jul 3

Fingerprint

Nanowires
Single electron transistors
Resonant tunneling
single electron transistors
resonant tunneling
Silicon
Magnetic Fields
nanowires
Electrons
Magnetic fields
Coulomb blockade
silicon transistors
Quantum Dots
silicon
magnetic fields
Constriction
Semiconductor quantum dots
constrictions
Electrodes
Theoretical Models

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Aravind, K. ; Lin, M. C. ; Ho, I. L. ; Wu, C. S. ; Kuo, Watson ; Kuan, C. H. ; Chang-Liao, K. S. ; Chen, C. D. / Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 3. pp. 2509-2512.
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Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor. / Aravind, K.; Lin, M. C.; Ho, I. L.; Wu, C. S.; Kuo, Watson; Kuan, C. H.; Chang-Liao, K. S.; Chen, C. D.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 3, 03.07.2012, p. 2509-2512.

Research output: Contribution to journalArticle

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