Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor

K. Aravind, M. C. Lin, I. L. Ho, C. S. Wu, Watson Kuo, C. H. Kuan, K. S. Chang-Liao, C. D. Chen

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1 Citation (Scopus)

Abstract

We report fabrication, measurement and simulation of silicon single-electron-transistors made on silicon-on-insulator wafers. At T~2 K, these devices showed clear Coulomb blockade structures. An external perpendicular magnetic field was found to enhance the resonant tunneling peak and was used to predict the presence of two laterally coupled quantum dots in the narrow constriction between the source-drain electrodes. The proposed model and measured experimental data were consistently explained using numerical simulations.

Original languageEnglish
Pages (from-to)2509-2512
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number3
DOIs
Publication statusPublished - 2012 Jul 3

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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    Aravind, K., Lin, M. C., Ho, I. L., Wu, C. S., Kuo, W., Kuan, C. H., Chang-Liao, K. S., & Chen, C. D. (2012). Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor. Journal of Nanoscience and Nanotechnology, 12(3), 2509-2512. https://doi.org/10.1166/jnn.2012.5797