Magnetic domain reversal behavior for various patterned hole depths

Te Ho Wu, L. X. Ye, Chun Shin Yeh, Y. W. Huang, Bohr Ran Huang, Jong-Ching Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have measured the domain reversal behavior for amorphous alloys of a rare earth-transition metal DyFeCo thin film with hole arrays by means of a modified Kerr microscope. We found that the shallow hole arrays had sharper domain boundaries than the deeper hole arrays when an applied magnetic field nears the coercivity. We also found that, when the hole depth is shallower, the magnetic anisotropy becomes more profound for the domain pinning effect. Moreover, the magnetic domain pinning effect due to the hole barrier becomes significantly practical as the hole depth approaches the film thickness.

Original languageEnglish
Pages (from-to)950-952
Number of pages3
JournalIEEE Transactions on Magnetics
Volume41
Issue number2
DOIs
Publication statusPublished - 2005 Feb 1

Fingerprint

Magnetic domains
Magnetic anisotropy
Amorphous alloys
magnetic domains
Coercive force
Rare earths
Transition metals
Film thickness
Microscopes
Magnetic fields
Thin films
coercivity
film thickness
rare earth elements
transition metals
microscopes
anisotropy
thin films
magnetic fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Wu, Te Ho ; Ye, L. X. ; Yeh, Chun Shin ; Huang, Y. W. ; Huang, Bohr Ran ; Wu, Jong-Ching. / Magnetic domain reversal behavior for various patterned hole depths. In: IEEE Transactions on Magnetics. 2005 ; Vol. 41, No. 2. pp. 950-952.
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Magnetic domain reversal behavior for various patterned hole depths. / Wu, Te Ho; Ye, L. X.; Yeh, Chun Shin; Huang, Y. W.; Huang, Bohr Ran; Wu, Jong-Ching.

In: IEEE Transactions on Magnetics, Vol. 41, No. 2, 01.02.2005, p. 950-952.

Research output: Contribution to journalArticle

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