Magnetic domain pinning in lithographically patterned amorphous magnetic layer

Jong-Ching Wu, Ying Wen Huang, Bing Mau Chen, Te Ho Wu, Han Ping D. Shieh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Artificial pinning sites have been fabricated for the magnetic domain pinning in perpendicular anisotropy magneto-optical (MO) thin film media. The pinning sites were radial hole array made by patterning a layer of radial gold grid on the silicon nitride (SiN) coated silicon (Si) substrate using a standard electron beam lithography. Various magnetization and demagnetization procedures were performed to investigate the magnetic domain pinning behavior. A polar Kerr microscope was used in situ to monitor the magnetic wall motion and a magnetic force microscope was employed to scan the magnetic domain structures. Magnetic domains were found to be pinned inside the hole array and resembled to the geometric shape of the holes. The coercivity in the patterned MO layer is much higher than in the unpatterned MO layer. Moreover, the coercivity in the larger pinning sites area is higher than in the smaller pinning sites area.

Original languageEnglish
Pages (from-to)1832-1834
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number3 B
Publication statusPublished - 1999 Dec 1

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Magnetic domains
magnetic domains
Coercive force
Microscopes
Optical films
Demagnetization
coercivity
Electron beam lithography
Silicon nitride
microscopes
Magnetization
Anisotropy
Gold
demagnetization
silicon nitrides
Thin films
Silicon
Substrates
lithography
grids

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "Artificial pinning sites have been fabricated for the magnetic domain pinning in perpendicular anisotropy magneto-optical (MO) thin film media. The pinning sites were radial hole array made by patterning a layer of radial gold grid on the silicon nitride (SiN) coated silicon (Si) substrate using a standard electron beam lithography. Various magnetization and demagnetization procedures were performed to investigate the magnetic domain pinning behavior. A polar Kerr microscope was used in situ to monitor the magnetic wall motion and a magnetic force microscope was employed to scan the magnetic domain structures. Magnetic domains were found to be pinned inside the hole array and resembled to the geometric shape of the holes. The coercivity in the patterned MO layer is much higher than in the unpatterned MO layer. Moreover, the coercivity in the larger pinning sites area is higher than in the smaller pinning sites area.",
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Magnetic domain pinning in lithographically patterned amorphous magnetic layer. / Wu, Jong-Ching; Huang, Ying Wen; Chen, Bing Mau; Wu, Te Ho; Shieh, Han Ping D.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 3 B, 01.12.1999, p. 1832-1834.

Research output: Contribution to journalArticle

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