Luminescence behavior and compensation effect on the hole concentration in the sol-gel Zn1-xCuxSy films with different compositions

Wei Shih Ni, Yow Jon Lin, Hsing Cheng Chang, Chia Jyi Liu, Liang Ru Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This study determines the effect of Cu and S content on the structural, luminescence and electrical properties of sol-gel Zn1-xCuxSy films. The dependence of acceptors [interstitial sulfur (Si)] and donors [sulfur vacancy (VS)] on the film composition allows the hole concentration of Zn1-xCuxSy samples to be tuned. It is found that an increased Cu/Zn molar ratio leads to a reduced probability of the formation of VS, which increases the hole concentration. An increase in Cu/Zn and S/Zn molar ratios leads to a significantly increased probability of the formation of Si and a reduced probability of the formation of VS, which significantly increases the hole concentration. Clearly, compensation effects limit the hole concentration of Zn1-xCuxSy samples. The results show that Si is the origin of the p-type conductivity. It is also shown that a suitable choice of composition increases acceptor-like defect formation in Zn1-xCuxSy.

Original languageEnglish
Pages (from-to)241-244
Number of pages4
JournalJournal of Luminescence
Volume168
DOIs
Publication statusPublished - 2015 Dec 2

Fingerprint

Hole concentration
Polymethyl Methacrylate
Luminescence
Sol-gels
Gels
gels
luminescence
Sulfur
Chemical analysis
sulfur
Vacancies
interstitials
Electric properties
electrical properties
conductivity
Defects
Compensation and Redress
defects

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

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abstract = "This study determines the effect of Cu and S content on the structural, luminescence and electrical properties of sol-gel Zn1-xCuxSy films. The dependence of acceptors [interstitial sulfur (Si)] and donors [sulfur vacancy (VS)] on the film composition allows the hole concentration of Zn1-xCuxSy samples to be tuned. It is found that an increased Cu/Zn molar ratio leads to a reduced probability of the formation of VS, which increases the hole concentration. An increase in Cu/Zn and S/Zn molar ratios leads to a significantly increased probability of the formation of Si and a reduced probability of the formation of VS, which significantly increases the hole concentration. Clearly, compensation effects limit the hole concentration of Zn1-xCuxSy samples. The results show that Si is the origin of the p-type conductivity. It is also shown that a suitable choice of composition increases acceptor-like defect formation in Zn1-xCuxSy.",
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Luminescence behavior and compensation effect on the hole concentration in the sol-gel Zn1-xCuxSy films with different compositions. / Ni, Wei Shih; Lin, Yow Jon; Chang, Hsing Cheng; Liu, Chia Jyi; Chen, Liang Ru.

In: Journal of Luminescence, Vol. 168, 02.12.2015, p. 241-244.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Chen, Liang Ru

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AB - This study determines the effect of Cu and S content on the structural, luminescence and electrical properties of sol-gel Zn1-xCuxSy films. The dependence of acceptors [interstitial sulfur (Si)] and donors [sulfur vacancy (VS)] on the film composition allows the hole concentration of Zn1-xCuxSy samples to be tuned. It is found that an increased Cu/Zn molar ratio leads to a reduced probability of the formation of VS, which increases the hole concentration. An increase in Cu/Zn and S/Zn molar ratios leads to a significantly increased probability of the formation of Si and a reduced probability of the formation of VS, which significantly increases the hole concentration. Clearly, compensation effects limit the hole concentration of Zn1-xCuxSy samples. The results show that Si is the origin of the p-type conductivity. It is also shown that a suitable choice of composition increases acceptor-like defect formation in Zn1-xCuxSy.

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