Luminescence behavior and compensation effect on the hole concentration in the sol-gel Zn1-xCuxSy films with different compositions

Wei Shih Ni, Yow Jon Lin, Hsing Cheng Chang, Chia Jyi Liu, Liang Ru Chen

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Abstract

This study determines the effect of Cu and S content on the structural, luminescence and electrical properties of sol-gel Zn1-xCuxSy films. The dependence of acceptors [interstitial sulfur (Si)] and donors [sulfur vacancy (VS)] on the film composition allows the hole concentration of Zn1-xCuxSy samples to be tuned. It is found that an increased Cu/Zn molar ratio leads to a reduced probability of the formation of VS, which increases the hole concentration. An increase in Cu/Zn and S/Zn molar ratios leads to a significantly increased probability of the formation of Si and a reduced probability of the formation of VS, which significantly increases the hole concentration. Clearly, compensation effects limit the hole concentration of Zn1-xCuxSy samples. The results show that Si is the origin of the p-type conductivity. It is also shown that a suitable choice of composition increases acceptor-like defect formation in Zn1-xCuxSy.

Original languageEnglish
Pages (from-to)241-244
Number of pages4
JournalJournal of Luminescence
Volume168
DOIs
Publication statusPublished - 2015 Dec 2

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All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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