Abstract
This study determines the effect of Cu and S content on the structural, luminescence and electrical properties of sol-gel Zn1-xCuxSy films. The dependence of acceptors [interstitial sulfur (Si)] and donors [sulfur vacancy (VS)] on the film composition allows the hole concentration of Zn1-xCuxSy samples to be tuned. It is found that an increased Cu/Zn molar ratio leads to a reduced probability of the formation of VS, which increases the hole concentration. An increase in Cu/Zn and S/Zn molar ratios leads to a significantly increased probability of the formation of Si and a reduced probability of the formation of VS, which significantly increases the hole concentration. Clearly, compensation effects limit the hole concentration of Zn1-xCuxSy samples. The results show that Si is the origin of the p-type conductivity. It is also shown that a suitable choice of composition increases acceptor-like defect formation in Zn1-xCuxSy.
| Original language | English |
|---|---|
| Pages (from-to) | 241-244 |
| Number of pages | 4 |
| Journal | Journal of Luminescence |
| Volume | 168 |
| DOIs | |
| Publication status | Published - 2015 Dec 2 |
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All Science Journal Classification (ASJC) codes
- Biophysics
- Biochemistry
- Chemistry(all)
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
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Luminescence behavior and compensation effect on the hole concentration in the sol-gel Zn1-xCuxSy films with different compositions. / Ni, Wei Shih; Lin, Yow Jon; Chang, Hsing Cheng; Liu, Chia Jyi; Chen, Liang Ru.
In: Journal of Luminescence, Vol. 168, 02.12.2015, p. 241-244.Research output: Contribution to journal › Article
TY - JOUR
T1 - Luminescence behavior and compensation effect on the hole concentration in the sol-gel Zn1-xCuxSy films with different compositions
AU - Ni, Wei Shih
AU - Lin, Yow Jon
AU - Chang, Hsing Cheng
AU - Liu, Chia Jyi
AU - Chen, Liang Ru
PY - 2015/12/2
Y1 - 2015/12/2
N2 - This study determines the effect of Cu and S content on the structural, luminescence and electrical properties of sol-gel Zn1-xCuxSy films. The dependence of acceptors [interstitial sulfur (Si)] and donors [sulfur vacancy (VS)] on the film composition allows the hole concentration of Zn1-xCuxSy samples to be tuned. It is found that an increased Cu/Zn molar ratio leads to a reduced probability of the formation of VS, which increases the hole concentration. An increase in Cu/Zn and S/Zn molar ratios leads to a significantly increased probability of the formation of Si and a reduced probability of the formation of VS, which significantly increases the hole concentration. Clearly, compensation effects limit the hole concentration of Zn1-xCuxSy samples. The results show that Si is the origin of the p-type conductivity. It is also shown that a suitable choice of composition increases acceptor-like defect formation in Zn1-xCuxSy.
AB - This study determines the effect of Cu and S content on the structural, luminescence and electrical properties of sol-gel Zn1-xCuxSy films. The dependence of acceptors [interstitial sulfur (Si)] and donors [sulfur vacancy (VS)] on the film composition allows the hole concentration of Zn1-xCuxSy samples to be tuned. It is found that an increased Cu/Zn molar ratio leads to a reduced probability of the formation of VS, which increases the hole concentration. An increase in Cu/Zn and S/Zn molar ratios leads to a significantly increased probability of the formation of Si and a reduced probability of the formation of VS, which significantly increases the hole concentration. Clearly, compensation effects limit the hole concentration of Zn1-xCuxSy samples. The results show that Si is the origin of the p-type conductivity. It is also shown that a suitable choice of composition increases acceptor-like defect formation in Zn1-xCuxSy.
UR - http://www.scopus.com/inward/record.url?scp=84940527545&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84940527545&partnerID=8YFLogxK
U2 - 10.1016/j.jlumin.2015.08.021
DO - 10.1016/j.jlumin.2015.08.021
M3 - Article
AN - SCOPUS:84940527545
VL - 168
SP - 241
EP - 244
JO - Journal of Luminescence
JF - Journal of Luminescence
SN - 0022-2313
ER -