Luminescence behavior and compensation effect of N-doped ZnO films deposited by rf magnetron sputtering under various gas-flow ratios of O 2/N2

Wei Min Cho, Yow Jon Lin, Chia Jyi Liu, Liang Ru Chen, Yu Tai Shih, Perry Chen

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The photoluminescent and electrical properties of N-doped ZnO films fabricated by rf magnetron sputtering under various gas-flow ratios of O 2/N2 were examined in this study. The dependence of conduction type on the gas-flow rate of O2/N2 was found. The authors identified a direct correlation between the defect spectral feature and conduction type of N-doped ZnO samples and provided a physical model for producing p-type ZnO. According to these observed results, the authors suggested that p-type conversion of N-doped ZnO may be due to a combined effect of the increased acceptor (substitutional nitrogen in oxygen site, zinc vacancy and interstitial oxygen) density and the decreased donor (oxygen vacancy) density. In addition, synthesis of p-type N-doped ZnO was repeated, suggesting that p-type ZnO can be fabricated with excellent reproducibility by rf magnetron sputtering a ZnO target doped with nitrogen.

Original languageEnglish
Pages (from-to)884-887
Number of pages4
JournalJournal of Luminescence
Publication statusPublished - 2014 Jan 1


All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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