Luminescence behavior and compensation effect of N-doped ZnO films deposited by rf magnetron sputtering under various gas-flow ratios of O 2/N2

Wei Min Cho, Yow-Jon Lin, Chia-Jyi Liu, Liang Ru Chen, Yu-Tai Shih, Perry Chen

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6 Citations (Scopus)

Abstract

The photoluminescent and electrical properties of N-doped ZnO films fabricated by rf magnetron sputtering under various gas-flow ratios of O 2/N2 were examined in this study. The dependence of conduction type on the gas-flow rate of O2/N2 was found. The authors identified a direct correlation between the defect spectral feature and conduction type of N-doped ZnO samples and provided a physical model for producing p-type ZnO. According to these observed results, the authors suggested that p-type conversion of N-doped ZnO may be due to a combined effect of the increased acceptor (substitutional nitrogen in oxygen site, zinc vacancy and interstitial oxygen) density and the decreased donor (oxygen vacancy) density. In addition, synthesis of p-type N-doped ZnO was repeated, suggesting that p-type ZnO can be fabricated with excellent reproducibility by rf magnetron sputtering a ZnO target doped with nitrogen.

Original languageEnglish
Pages (from-to)884-887
Number of pages4
JournalJournal of Luminescence
Volume145
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Luminescence
Magnetron sputtering
gas flow
Flow of gases
magnetron sputtering
Nitrogen
Gases
luminescence
Oxygen
oxygen
Oxygen vacancies
Vacancies
Zinc
nitrogen
conduction
Electric properties
Flow rate
Defects
interstitials
flow velocity

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Biochemistry
  • Condensed Matter Physics

Cite this

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title = "Luminescence behavior and compensation effect of N-doped ZnO films deposited by rf magnetron sputtering under various gas-flow ratios of O 2/N2",
abstract = "The photoluminescent and electrical properties of N-doped ZnO films fabricated by rf magnetron sputtering under various gas-flow ratios of O 2/N2 were examined in this study. The dependence of conduction type on the gas-flow rate of O2/N2 was found. The authors identified a direct correlation between the defect spectral feature and conduction type of N-doped ZnO samples and provided a physical model for producing p-type ZnO. According to these observed results, the authors suggested that p-type conversion of N-doped ZnO may be due to a combined effect of the increased acceptor (substitutional nitrogen in oxygen site, zinc vacancy and interstitial oxygen) density and the decreased donor (oxygen vacancy) density. In addition, synthesis of p-type N-doped ZnO was repeated, suggesting that p-type ZnO can be fabricated with excellent reproducibility by rf magnetron sputtering a ZnO target doped with nitrogen.",
author = "Cho, {Wei Min} and Yow-Jon Lin and Chia-Jyi Liu and Chen, {Liang Ru} and Yu-Tai Shih and Perry Chen",
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T1 - Luminescence behavior and compensation effect of N-doped ZnO films deposited by rf magnetron sputtering under various gas-flow ratios of O 2/N2

AU - Cho, Wei Min

AU - Lin, Yow-Jon

AU - Liu, Chia-Jyi

AU - Chen, Liang Ru

AU - Shih, Yu-Tai

AU - Chen, Perry

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The photoluminescent and electrical properties of N-doped ZnO films fabricated by rf magnetron sputtering under various gas-flow ratios of O 2/N2 were examined in this study. The dependence of conduction type on the gas-flow rate of O2/N2 was found. The authors identified a direct correlation between the defect spectral feature and conduction type of N-doped ZnO samples and provided a physical model for producing p-type ZnO. According to these observed results, the authors suggested that p-type conversion of N-doped ZnO may be due to a combined effect of the increased acceptor (substitutional nitrogen in oxygen site, zinc vacancy and interstitial oxygen) density and the decreased donor (oxygen vacancy) density. In addition, synthesis of p-type N-doped ZnO was repeated, suggesting that p-type ZnO can be fabricated with excellent reproducibility by rf magnetron sputtering a ZnO target doped with nitrogen.

AB - The photoluminescent and electrical properties of N-doped ZnO films fabricated by rf magnetron sputtering under various gas-flow ratios of O 2/N2 were examined in this study. The dependence of conduction type on the gas-flow rate of O2/N2 was found. The authors identified a direct correlation between the defect spectral feature and conduction type of N-doped ZnO samples and provided a physical model for producing p-type ZnO. According to these observed results, the authors suggested that p-type conversion of N-doped ZnO may be due to a combined effect of the increased acceptor (substitutional nitrogen in oxygen site, zinc vacancy and interstitial oxygen) density and the decreased donor (oxygen vacancy) density. In addition, synthesis of p-type N-doped ZnO was repeated, suggesting that p-type ZnO can be fabricated with excellent reproducibility by rf magnetron sputtering a ZnO target doped with nitrogen.

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