Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering

Yi-Cheng or Y. C. Lin, J. Y. Li, W. T. Yen

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 × 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%.

Original languageEnglish
Pages (from-to)3262-3268
Number of pages7
JournalApplied Surface Science
Volume254
Issue number11
DOIs
Publication statusPublished - 2008 Mar 30

Fingerprint

Tin oxides
Magnetron sputtering
Indium
Oxide films
Thin films
Substrates
Optoelectronic devices
Temperature
Residual stresses
Plastics
Opacity
Deposition rates
indium tin oxide
polyether sulfone
Deposits
Surface roughness
Microstructure
Scanning electron microscopy
Experiments

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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abstract = "Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95{\%}, thin film with an optimized electrical 3.0 × 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85{\%}.",
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Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering. / Lin, Yi-Cheng or Y. C.; Li, J. Y.; Yen, W. T.

In: Applied Surface Science, Vol. 254, No. 11, 30.03.2008, p. 3262-3268.

Research output: Contribution to journalArticle

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