Abstract
We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively-coupled plasma CVD at 400°C. Gold nanoparticles, attached to silicon oxide through a self-assembled monolayer, were adopted as catalysts to allow access to a vapor-liquid-solid process. The density of polycrystalline germanium dots is 1.46 × 1011 cm-2, which is consistent with the density of the gold nanoparticles. The mechanism by which the undesirable gold catalysts are removed during the germanium dot growth process has been elucidated. This technique provides a low-temperature process for the fabrication of devices consisting of germanium quantum dots on an insulator surface.
| Original language | English |
|---|---|
| Pages (from-to) | 265-269 |
| Number of pages | 5 |
| Journal | Chemical Vapor Deposition |
| Volume | 10 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2004 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Surfaces and Interfaces
- Process Chemistry and Technology
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Low-temperature growth of germanium quantum dots on Silicon Oxide by inductively coupled plasma CVD. / Shieh, Jiann; Ko, Tsung-Shine; Chen, Hsuen Li; Dai, Bau Tong; Chu, Tieh Chi.
In: Chemical Vapor Deposition, Vol. 10, No. 5, 01.10.2004, p. 265-269.Research output: Contribution to journal › Article
TY - JOUR
T1 - Low-temperature growth of germanium quantum dots on Silicon Oxide by inductively coupled plasma CVD
AU - Shieh, Jiann
AU - Ko, Tsung-Shine
AU - Chen, Hsuen Li
AU - Dai, Bau Tong
AU - Chu, Tieh Chi
PY - 2004/10/1
Y1 - 2004/10/1
N2 - We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively-coupled plasma CVD at 400°C. Gold nanoparticles, attached to silicon oxide through a self-assembled monolayer, were adopted as catalysts to allow access to a vapor-liquid-solid process. The density of polycrystalline germanium dots is 1.46 × 1011 cm-2, which is consistent with the density of the gold nanoparticles. The mechanism by which the undesirable gold catalysts are removed during the germanium dot growth process has been elucidated. This technique provides a low-temperature process for the fabrication of devices consisting of germanium quantum dots on an insulator surface.
AB - We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively-coupled plasma CVD at 400°C. Gold nanoparticles, attached to silicon oxide through a self-assembled monolayer, were adopted as catalysts to allow access to a vapor-liquid-solid process. The density of polycrystalline germanium dots is 1.46 × 1011 cm-2, which is consistent with the density of the gold nanoparticles. The mechanism by which the undesirable gold catalysts are removed during the germanium dot growth process has been elucidated. This technique provides a low-temperature process for the fabrication of devices consisting of germanium quantum dots on an insulator surface.
UR - http://www.scopus.com/inward/record.url?scp=10444285394&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=10444285394&partnerID=8YFLogxK
U2 - 10.1002/cvde.200306300
DO - 10.1002/cvde.200306300
M3 - Article
VL - 10
SP - 265
EP - 269
JO - Chemical Vapor Deposition
JF - Chemical Vapor Deposition
SN - 0948-1907
IS - 5
ER -