Low resistivity GaN-based polarization-induced tunnel junctions

Miao Chan Tsai, Benjamin Leung, Ta Cheng Hsu, Yen Kuang Kuo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The use of polarization charges in nitride based tunnel junctions enables a wide range of design approaches to increase the tunneling current to magnitudes usable in high efficiency GaN-based devices, including enhanced multijunction solar cells, optoelectronic and electronic devices. Here, an integrated computational model is used to explore and design the dopant concentration profile and implement the hybrid use of both AlGaN and InGaN layers to systematically optimize the configuration of polarization charges in the structure. The proposed tunnel junction structure, with indium composition and doping density compatible for insertion into a typical Ga-polar InGaN multiple-quantum well light-emitting diode structure, allows a high tunneling efficiency under reverse bias condition, achieving a resistivity of 7.8 × 10-3 Ω·cm2.

Original languageEnglish
Article number6627970
Pages (from-to)3575-3581
Number of pages7
JournalJournal of Lightwave Technology
Volume31
Issue number22
DOIs
Publication statusPublished - 2013 Nov 25

Fingerprint

tunnel junctions
electrical resistivity
polarization
optoelectronic devices
nitrides
indium
insertion
light emitting diodes
solar cells
quantum wells
profiles
configurations
electronics

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Tsai, Miao Chan ; Leung, Benjamin ; Hsu, Ta Cheng ; Kuo, Yen Kuang. / Low resistivity GaN-based polarization-induced tunnel junctions. In: Journal of Lightwave Technology. 2013 ; Vol. 31, No. 22. pp. 3575-3581.
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Low resistivity GaN-based polarization-induced tunnel junctions. / Tsai, Miao Chan; Leung, Benjamin; Hsu, Ta Cheng; Kuo, Yen Kuang.

In: Journal of Lightwave Technology, Vol. 31, No. 22, 6627970, 25.11.2013, p. 3575-3581.

Research output: Contribution to journalArticle

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