Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

Y. J. Lin, H. Y. Lee, F. T. Hwang, C. T. Lee

Research output: Contribution to journalArticle

23 Citations (Scopus)


Ohmic contacts to n-type GaN with low contact resistance were developed by (NH4)2Sx and KOH+(NH4)2Sx surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 × 10-6 Ω-cm2 was obtained for Ti/Al contacts in an (NH4)2Sx-treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)2Sx treatment conditions for both (NH4)2Sx and KOH+(NH4)2Sx-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.

Original languageEnglish
Pages (from-to)532-537
Number of pages6
JournalJournal of Electronic Materials
Issue number5
Publication statusPublished - 2001 May


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this