Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

Yow-Jon Lin, H. Y. Lee, F. T. Hwang, C. T. Lee

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Ohmic contacts to n-type GaN with low contact resistance were developed by (NH4)2Sx and KOH+(NH4)2Sx surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 × 10-6 Ω-cm2 was obtained for Ti/Al contacts in an (NH4)2Sx-treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)2Sx treatment conditions for both (NH4)2Sx and KOH+(NH4)2Sx-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.

Original languageEnglish
Pages (from-to)532-537
Number of pages6
JournalJournal of Electronic Materials
Volume30
Issue number5
DOIs
Publication statusPublished - 2001 Jan 1

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Ohmic contacts
Contact resistance
contact resistance
electric contacts
surface treatment
Temperature
Surface treatment
Metals
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "Ohmic contacts to n-type GaN with low contact resistance were developed by (NH4)2Sx and KOH+(NH4)2Sx surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 × 10-6 Ω-cm2 was obtained for Ti/Al contacts in an (NH4)2Sx-treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)2Sx treatment conditions for both (NH4)2Sx and KOH+(NH4)2Sx-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.",
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Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature. / Lin, Yow-Jon; Lee, H. Y.; Hwang, F. T.; Lee, C. T.

In: Journal of Electronic Materials, Vol. 30, No. 5, 01.01.2001, p. 532-537.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

AU - Lin, Yow-Jon

AU - Lee, H. Y.

AU - Hwang, F. T.

AU - Lee, C. T.

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AB - Ohmic contacts to n-type GaN with low contact resistance were developed by (NH4)2Sx and KOH+(NH4)2Sx surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 × 10-6 Ω-cm2 was obtained for Ti/Al contacts in an (NH4)2Sx-treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)2Sx treatment conditions for both (NH4)2Sx and KOH+(NH4)2Sx-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.

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