Abstract
A low-power smart temperature sensor is proposed in this paper. The sensor was composed of a proportional-to-absolute-temperature (PTAT) circuit and a ring oscillator. The PTAT circuit was used to generate a temperature-related current. The current was used to drive the ring oscillator, which may generate a temperature-related oscillated signal. The sensor was implemented by the 0.35 μm 2P4M TSMC complementary-metal-oxide-semiconductor (CMOS) process technology. The power consumption is about 195.15 nW. The linearity of the output frequency versus temperature is marked by the R-square rule. The value of the linearity is 0.98 in the entire temperature range. The proposed sensor requires only one supply voltage of 3.3 V. The core area of the sensor is small enough for combining itself with other circuits that require temperature monitoring.
| Original language | English |
|---|---|
| Pages (from-to) | 341-346 |
| Number of pages | 6 |
| Journal | Sensors and Materials |
| Volume | 25 |
| Issue number | 6 |
| Publication status | Published - 2013 Sep 24 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Instrumentation
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Low-power temperature sensor with complementary-metal-oxide-semiconductor circuits. / Yi, Shu-chung.
In: Sensors and Materials, Vol. 25, No. 6, 24.09.2013, p. 341-346.Research output: Contribution to journal › Article
TY - JOUR
T1 - Low-power temperature sensor with complementary-metal-oxide-semiconductor circuits
AU - Yi, Shu-chung
PY - 2013/9/24
Y1 - 2013/9/24
N2 - A low-power smart temperature sensor is proposed in this paper. The sensor was composed of a proportional-to-absolute-temperature (PTAT) circuit and a ring oscillator. The PTAT circuit was used to generate a temperature-related current. The current was used to drive the ring oscillator, which may generate a temperature-related oscillated signal. The sensor was implemented by the 0.35 μm 2P4M TSMC complementary-metal-oxide-semiconductor (CMOS) process technology. The power consumption is about 195.15 nW. The linearity of the output frequency versus temperature is marked by the R-square rule. The value of the linearity is 0.98 in the entire temperature range. The proposed sensor requires only one supply voltage of 3.3 V. The core area of the sensor is small enough for combining itself with other circuits that require temperature monitoring.
AB - A low-power smart temperature sensor is proposed in this paper. The sensor was composed of a proportional-to-absolute-temperature (PTAT) circuit and a ring oscillator. The PTAT circuit was used to generate a temperature-related current. The current was used to drive the ring oscillator, which may generate a temperature-related oscillated signal. The sensor was implemented by the 0.35 μm 2P4M TSMC complementary-metal-oxide-semiconductor (CMOS) process technology. The power consumption is about 195.15 nW. The linearity of the output frequency versus temperature is marked by the R-square rule. The value of the linearity is 0.98 in the entire temperature range. The proposed sensor requires only one supply voltage of 3.3 V. The core area of the sensor is small enough for combining itself with other circuits that require temperature monitoring.
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UR - http://www.scopus.com/inward/citedby.url?scp=84884344306&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:84884344306
VL - 25
SP - 341
EP - 346
JO - Sensors and Materials
JF - Sensors and Materials
SN - 0914-4935
IS - 6
ER -