Low operating voltage and high efficiency organic multilayer electroluminescent devices with p-type doped hole injection layer

Jian-Da Wu, Mingsian R. Bai

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12 Citations (Scopus)

Abstract

We demonstrate efficient organic electroluminescent devices with multiple well structure and a p-doped hole injection and transport layer (HTL). The multiple well structure improves the efficiency and the controlled p-doped HTL leads to a lower operating voltage. An amorphous starbust [4,4′,4″-tris(N,N-diphenylamino)triphenylamine] doped with a strong organic acceptor, tetrafluoro-tetracyano-quinodimethane serves as the HTL material, a spiro-linked compound, 2,2′,7′,7′-tetra-kis-(diphenylamine)-9,9′-spirobifluoren e as an interlayer to provide a favorable interface and as a barrier within the multiple well structure and 8-tris-hydroxyquinoline as an emitter and well. The double-well device exhibits low operating voltage, less than 4 V, for obtaining 100 cd/m2 and the highest current efficiency exceeding 5 cd/A. Changes in the spectra due to the different well structures are also discussed.

Original languageEnglish
Pages (from-to)6630-6633
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number11
Publication statusPublished - 2001 Nov 1

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Luminescent devices
Multilayers
injection
Electric potential
electric potential
high current
interlayers
emitters

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We demonstrate efficient organic electroluminescent devices with multiple well structure and a p-doped hole injection and transport layer (HTL). The multiple well structure improves the efficiency and the controlled p-doped HTL leads to a lower operating voltage. An amorphous starbust [4,4′,4″-tris(N,N-diphenylamino)triphenylamine] doped with a strong organic acceptor, tetrafluoro-tetracyano-quinodimethane serves as the HTL material, a spiro-linked compound, 2,2′,7′,7′-tetra-kis-(diphenylamine)-9,9′-spirobifluoren e as an interlayer to provide a favorable interface and as a barrier within the multiple well structure and 8-tris-hydroxyquinoline as an emitter and well. The double-well device exhibits low operating voltage, less than 4 V, for obtaining 100 cd/m2 and the highest current efficiency exceeding 5 cd/A. Changes in the spectra due to the different well structures are also discussed.",
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N2 - We demonstrate efficient organic electroluminescent devices with multiple well structure and a p-doped hole injection and transport layer (HTL). The multiple well structure improves the efficiency and the controlled p-doped HTL leads to a lower operating voltage. An amorphous starbust [4,4′,4″-tris(N,N-diphenylamino)triphenylamine] doped with a strong organic acceptor, tetrafluoro-tetracyano-quinodimethane serves as the HTL material, a spiro-linked compound, 2,2′,7′,7′-tetra-kis-(diphenylamine)-9,9′-spirobifluoren e as an interlayer to provide a favorable interface and as a barrier within the multiple well structure and 8-tris-hydroxyquinoline as an emitter and well. The double-well device exhibits low operating voltage, less than 4 V, for obtaining 100 cd/m2 and the highest current efficiency exceeding 5 cd/A. Changes in the spectra due to the different well structures are also discussed.

AB - We demonstrate efficient organic electroluminescent devices with multiple well structure and a p-doped hole injection and transport layer (HTL). The multiple well structure improves the efficiency and the controlled p-doped HTL leads to a lower operating voltage. An amorphous starbust [4,4′,4″-tris(N,N-diphenylamino)triphenylamine] doped with a strong organic acceptor, tetrafluoro-tetracyano-quinodimethane serves as the HTL material, a spiro-linked compound, 2,2′,7′,7′-tetra-kis-(diphenylamine)-9,9′-spirobifluoren e as an interlayer to provide a favorable interface and as a barrier within the multiple well structure and 8-tris-hydroxyquinoline as an emitter and well. The double-well device exhibits low operating voltage, less than 4 V, for obtaining 100 cd/m2 and the highest current efficiency exceeding 5 cd/A. Changes in the spectra due to the different well structures are also discussed.

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