Low-leakage and low-power implementation of high-speed 65nm logic gates

Tsung Yi Wu, Liang Ying Lu, Cheng Hsun Liang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In this paper, we propose novel transmissiongate-based (TG-based) AND gates, TG-based OR gates, and pass-transistor logic gates that have new structures and have lower transistor counts than those proposed by other authors. All our proposed gates operate in full swing and have less leakage currents, less dynamic power consumption, and shorter delays than conventional CMOS gates. Compared with the conventional 65nm CMOS gates, our proposed 65nm gates can improve leakage currents, dynamic power consumption, and propagation delays by averages of 29.5%, 15.3%, and 30.3%, respectively. Logic synthesizers can use our proposed gates to facilitate power reduction. The experimental results show that Power Compiler can further reduce the leakage current and dynamic power up to 35.0% and 20.0%, respectively, when the standard cell library used by Power Compiler contains our proposed gates.

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 2008 Dec 82008 Dec 10

Publication series

Name2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period08-12-0808-12-10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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