Local current distribution and electrical properties of a magnetic tunnel junction using conducting atomic force microscopy

A. Canizo-Cabrera, Simon C. Li, Min Fong Shu, Jia Mou Lee, Valentin Garcia-Vazquez, C. C. Chen, Jong-Ching Wu, M. Takahashi, Te Ho Wu

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Abstract

Local topographical and electrical properties were simultaneously measured for a magnetic tunnel junction formed by Ta (50 Å)/Ni-Fe (20 Å)/Cu (50 Å)/Mn75 Ir25 (100 Å)/Co 70Fe30(40 Å)/Al-O (8-15 Å)/Co 70Fe30 (40 Å)/Ni-Fe (100 Å)/Ta (50 Å). Local current-voltage (I-V) characteristic curves were obtained for different contrast levels in the electrical current distribution images on the test sample. With the purpose of obtaining quantitative values for the barrier characteristics, data was analyzed by the Simmons' equation from -1.0 to 1.0 V. The magneto resistance ratio values were estimated to be 35.02%, with a bias voltage of 0.36 V, when applying a magnetic field of ±200 Oe. In addition, a study on the ramping effect on the dielectric tunneling capacitance and analytical resistance-capacitance (RC) model were carried out.

Original languageEnglish
Pages (from-to)887-891
Number of pages5
JournalIEEE Transactions on Magnetics
Volume41
Issue number2
DOIs
Publication statusPublished - 2005 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Canizo-Cabrera, A., Li, S. C., Shu, M. F., Lee, J. M., Garcia-Vazquez, V., Chen, C. C., Wu, J-C., Takahashi, M., & Wu, T. H. (2005). Local current distribution and electrical properties of a magnetic tunnel junction using conducting atomic force microscopy. IEEE Transactions on Magnetics, 41(2), 887-891. https://doi.org/10.1109/TMAG.2004.842080