Abstract
We will present the observation of light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the meta-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region.
| Original language | English |
|---|---|
| Pages (from-to) | 331-334 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 6 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 Feb |
| Event | 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can Duration: 1999 Aug 1 → 1999 Aug 6 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
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Cite this
Suen, Y. W., Young, C. C., Chang, C. J., Wu, J. C., Wang, S. Y., & Lee, C. P. (2000). Light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well. Physica E: Low-Dimensional Systems and Nanostructures, 6(1), 331-334. https://doi.org/10.1016/S1386-9477(99)00166-6