Light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well

Y. W. Suen, C. C. Young, C. J. Chang, J. C. Wu, S. Y. Wang, C. P. Lee

Research output: Contribution to journalConference article

Abstract

We will present the observation of light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the meta-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region.

Original languageEnglish
Pages (from-to)331-334
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume6
Issue number1
DOIs
Publication statusPublished - 2000 Feb
Event13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can
Duration: 1999 Aug 11999 Aug 6

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this