Light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well

Y. W. Suen; C. C. Young; C. J. Chang; J. C. Wu; S. Y. Wang; C. P. Lee

doi:10.1016/S1386-9477(99)00166-6

Light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well

Y. W. Suen, C. C. Young, C. J. Chang, J. C. Wu, S. Y. Wang, C. P. Lee

Department of Physics

Research output: Contribution to journal › Conference article

Abstract

We will present the observation of light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the meta-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region.

Original language	English
Pages (from-to)	331-334
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	6
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(99)00166-6
Publication status	Published - 2000 Feb
Event	13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can Duration: 1999 Aug 1 → 1999 Aug 6

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Cite this

Suen, Y. W., Young, C. C., Chang, C. J., Wu, J. C., Wang, S. Y., & Lee, C. P. (2000). Light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well. Physica E: Low-Dimensional Systems and Nanostructures, 6(1), 331-334. https://doi.org/10.1016/S1386-9477(99)00166-6

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AU - Suen, Y. W.

AU - Young, C. C.

AU - Chang, C. J.

AU - Wu, J. C.

AU - Wang, S. Y.

AU - Lee, C. P.

PY - 2000/2

Y1 - 2000/2

N2 - We will present the observation of light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the meta-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region.

AB - We will present the observation of light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the meta-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region.

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EP - 334

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

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10.1016/S1386-9477(99)00166-6