Light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well

Y. W. Suen; C. C. Young; C. J. Chang; J. C. Wu; S. Y. Wang; C. P. Lee

doi:10.1016/S1386-9477(99)00166-6

Light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well

Y. W. Suen, C. C. Young, C. J. Chang, J. C. Wu, S. Y. Wang, C. P. Lee

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

We will present the observation of light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the meta-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region.

Original language	English
Pages (from-to)	331-334
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	6
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(99)00166-6
Publication status	Published - 2000 Feb
Event	13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can Duration: 1999 Aug 1 → 1999 Aug 6

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well",

abstract = "We will present the observation of light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the meta-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region.",

author = "Suen, {Y. W.} and Young, {C. C.} and Chang, {C. J.} and Wu, {J. C.} and Wang, {S. Y.} and Lee, {C. P.}",

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T1 - Light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well

AU - Suen, Y. W.

AU - Young, C. C.

AU - Chang, C. J.

AU - Wu, J. C.

AU - Wang, S. Y.

AU - Lee, C. P.

PY - 2000/2

Y1 - 2000/2

N2 - We will present the observation of light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the meta-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region.

AB - We will present the observation of light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the meta-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region.

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DO - 10.1016/S1386-9477(99)00166-6

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SP - 331

EP - 334

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

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T2 - 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13)

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