Leakage currents through In/MgO/n-type Si/In structures

Hou Yen Tsao, Yow-Jon Lin, Ya Hui Chen, Hsing Cheng Chang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Leakage currents through In/MgO/n-type Si/In structures were studied. The electrical conduction investigations suggest that the leakage behavior is governed by the Schottky (PooleFrenkel) emission for the gate (substrate) injection. This is because of strong leakage current dependent on the interfacial property of devices. It is shown that the discrepancy in the MgO permittivity extracted from the Schottky and PooleFrenkel emissions is due to the formation of intermediate MgSixOy layer.

Original languageEnglish
Pages (from-to)693-696
Number of pages4
JournalSolid State Communications
Volume151
Issue number9
DOIs
Publication statusPublished - 2011 May 1

Fingerprint

Leakage currents
leakage
Permittivity
Substrates
permittivity
injection
conduction

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Chemistry

Cite this

Tsao, Hou Yen ; Lin, Yow-Jon ; Chen, Ya Hui ; Chang, Hsing Cheng. / Leakage currents through In/MgO/n-type Si/In structures. In: Solid State Communications. 2011 ; Vol. 151, No. 9. pp. 693-696.
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Leakage currents through In/MgO/n-type Si/In structures. / Tsao, Hou Yen; Lin, Yow-Jon; Chen, Ya Hui; Chang, Hsing Cheng.

In: Solid State Communications, Vol. 151, No. 9, 01.05.2011, p. 693-696.

Research output: Contribution to journalArticle

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