Leakage conduction mechanism of top-contact organic thin film transistors

Yow Jon Lin

doi:10.1016/j.synthmet.2010.10.015

Leakage conduction mechanism of top-contact organic thin film transistors

Yow Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.

Original language	English
Pages (from-to)	2628-2630
Number of pages	3
Journal	Synthetic Metals
Volume	160
Issue number	23-24
DOIs	https://doi.org/10.1016/j.synthmet.2010.10.015
Publication status	Published - 2010 Dec 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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