Leakage conduction mechanism of top-contact organic thin film transistors

Yow Jon Lin

doi:10.1016/j.synthmet.2010.10.015

Leakage conduction mechanism of top-contact organic thin film transistors

Yow Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.

Original language	English
Pages (from-to)	2628-2630
Number of pages	3
Journal	Synthetic Metals
Volume	160
Issue number	23-24
DOIs	https://doi.org/10.1016/j.synthmet.2010.10.015
Publication status	Published - 2010 Dec 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Cite this

Lin, Y. J. (2010). Leakage conduction mechanism of top-contact organic thin film transistors. Synthetic Metals, 160(23-24), 2628-2630. https://doi.org/10.1016/j.synthmet.2010.10.015

@article{e65fb73bf2054e809a759bf949a66bf0,

title = "Leakage conduction mechanism of top-contact organic thin film transistors",

abstract = "This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.",

author = "Lin, {Yow Jon}",

year = "2010",

month = "12",

day = "1",

doi = "10.1016/j.synthmet.2010.10.015",

language = "English",

volume = "160",

pages = "2628--2630",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "23-24",

}

TY - JOUR

T1 - Leakage conduction mechanism of top-contact organic thin film transistors

AU - Lin, Yow Jon

PY - 2010/12/1

Y1 - 2010/12/1

N2 - This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.

AB - This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.

UR - http://www.scopus.com/inward/record.url?scp=78650586600&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650586600&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2010.10.015

DO - 10.1016/j.synthmet.2010.10.015

M3 - Article

AN - SCOPUS:78650586600

VL - 160

SP - 2628

EP - 2630

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 23-24

ER -

Access to Document

10.1016/j.synthmet.2010.10.015