Abstract
This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.
| Original language | English |
|---|---|
| Pages (from-to) | 2628-2630 |
| Number of pages | 3 |
| Journal | Synthetic Metals |
| Volume | 160 |
| Issue number | 23-24 |
| DOIs | |
| Publication status | Published - 2010 Dec 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry