Abstract
This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.
| Original language | English |
|---|---|
| Pages (from-to) | 2628-2630 |
| Number of pages | 3 |
| Journal | Synthetic Metals |
| Volume | 160 |
| Issue number | 23-24 |
| DOIs | |
| Publication status | Published - 2010 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Mechanical Engineering
- Mechanics of Materials
- Materials Chemistry
- Metals and Alloys
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Leakage conduction mechanism of top-contact organic thin film transistors. / Lin, Yow-Jon.
In: Synthetic Metals, Vol. 160, No. 23-24, 01.12.2010, p. 2628-2630.Research output: Contribution to journal › Article
TY - JOUR
T1 - Leakage conduction mechanism of top-contact organic thin film transistors
AU - Lin, Yow-Jon
PY - 2010/12/1
Y1 - 2010/12/1
N2 - This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.
AB - This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.
UR - http://www.scopus.com/inward/record.url?scp=78650586600&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650586600&partnerID=8YFLogxK
U2 - 10.1016/j.synthmet.2010.10.015
DO - 10.1016/j.synthmet.2010.10.015
M3 - Article
AN - SCOPUS:78650586600
VL - 160
SP - 2628
EP - 2630
JO - Synthetic Metals
JF - Synthetic Metals
SN - 0379-6779
IS - 23-24
ER -