Leakage conduction mechanism of top-contact organic thin film transistors

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.

Original languageEnglish
Pages (from-to)2628-2630
Number of pages3
JournalSynthetic Metals
Volume160
Issue number23-24
DOIs
Publication statusPublished - 2010 Dec 1

Fingerprint

Thin film transistors
Leakage currents
leakage
transistors
conduction
Electric potential
thin films
electric potential

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.",
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Leakage conduction mechanism of top-contact organic thin film transistors. / Lin, Yow-Jon.

In: Synthetic Metals, Vol. 160, No. 23-24, 01.12.2010, p. 2628-2630.

Research output: Contribution to journalArticle

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