Leakage conduction behavior for top- and bottom-contact pentacene thin film transistors

Yow Jon Lin, Chang Lin Wu, Chia Hung Chiang, Po Chih Kuo

Research output: Contribution to journalArticle

Abstract

The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design. For top-contact OTFTs, the dominant leakage conduction mechanism is via Schottky emission and the density of the leakage current increases significantly as the bias voltage increases. For bottom-contact OTFTs, the dominant leakage conduction mechanism is via displacement current. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design.

Original languageEnglish
Pages (from-to)797-800
Number of pages4
JournalIndian Journal of Physics
Volume94
Issue number6
DOIs
Publication statusPublished - 2020 Jun 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Leakage conduction behavior for top- and bottom-contact pentacene thin film transistors'. Together they form a unique fingerprint.

  • Cite this