Leakage conduction behavior for top- and bottom-contact pentacene thin film transistors

Yow-Jon Lin, Chang Lin Wu, Chia Hung Chiang, Po Chih Kuo

Research output: Contribution to journalArticle

Abstract

The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design. For top-contact OTFTs, the dominant leakage conduction mechanism is via Schottky emission and the density of the leakage current increases significantly as the bias voltage increases. For bottom-contact OTFTs, the dominant leakage conduction mechanism is via displacement current. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design.

Original languageEnglish
JournalIndian Journal of Physics
DOIs
Publication statusPublished - 2019 Jan 1

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leakage
transistors
conduction
thin films
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design. For top-contact OTFTs, the dominant leakage conduction mechanism is via Schottky emission and the density of the leakage current increases significantly as the bias voltage increases. For bottom-contact OTFTs, the dominant leakage conduction mechanism is via displacement current. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design.",
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Leakage conduction behavior for top- and bottom-contact pentacene thin film transistors. / Lin, Yow-Jon; Wu, Chang Lin; Chiang, Chia Hung; Kuo, Po Chih.

In: Indian Journal of Physics, 01.01.2019.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Lin, Yow-Jon

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AB - The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design. For top-contact OTFTs, the dominant leakage conduction mechanism is via Schottky emission and the density of the leakage current increases significantly as the bias voltage increases. For bottom-contact OTFTs, the dominant leakage conduction mechanism is via displacement current. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design.

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