Iodine doping enabled wide range threshold voltage modulation in pentacene transistors

Yu-Wu Wang, Yu-Chung Chang, Ming Yue Hong

Research output: Contribution to journalArticle

Abstract

We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm2/Vs and on/off ratio ~105.

Original languageEnglish
Pages (from-to)29-33
Number of pages5
JournalThin Solid Films
Volume669
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Iodine
Threshold voltage
threshold voltage
iodine
Transistors
transistors
Doping (additives)
Modulation
modulation
high voltages
depletion
Heat treatment
pentacene
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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Iodine doping enabled wide range threshold voltage modulation in pentacene transistors. / Wang, Yu-Wu; Chang, Yu-Chung; Hong, Ming Yue.

In: Thin Solid Films, Vol. 669, 01.01.2019, p. 29-33.

Research output: Contribution to journalArticle

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