Abstract
We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm2/Vs and on/off ratio ~105.
| Original language | English |
|---|---|
| Pages (from-to) | 29-33 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 669 |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Iodine doping enabled wide range threshold voltage modulation in pentacene transistors. / Wang, Yu-Wu; Chang, Yu-Chung; Hong, Ming Yue.
In: Thin Solid Films, Vol. 669, 01.01.2019, p. 29-33.Research output: Contribution to journal › Article
TY - JOUR
T1 - Iodine doping enabled wide range threshold voltage modulation in pentacene transistors
AU - Wang, Yu-Wu
AU - Chang, Yu-Chung
AU - Hong, Ming Yue
PY - 2019/1/1
Y1 - 2019/1/1
N2 - We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm2/Vs and on/off ratio ~105.
AB - We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm2/Vs and on/off ratio ~105.
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UR - http://www.scopus.com/inward/citedby.url?scp=85055331059&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2018.10.024
DO - 10.1016/j.tsf.2018.10.024
M3 - Article
AN - SCOPUS:85055331059
VL - 669
SP - 29
EP - 33
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -