Iodine doping enabled wide range threshold voltage modulation in pentacene transistors

Yu Wu Wang; Yu Chung Chang; Ming Yue Hong

doi:10.1016/j.tsf.2018.10.024

Iodine doping enabled wide range threshold voltage modulation in pentacene transistors

Yu Wu Wang, Yu Chung Chang, Ming Yue Hong

Research output: Contribution to journal › Article

Abstract

We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm²/Vs and on/off ratio ~10⁵.

Original language	English
Pages (from-to)	29-33
Number of pages	5
Journal	Thin Solid Films
Volume	669
DOIs	https://doi.org/10.1016/j.tsf.2018.10.024
Publication status	Published - 2019 Jan 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

Wang, Y. W., Chang, Y. C., & Hong, M. Y. (2019). Iodine doping enabled wide range threshold voltage modulation in pentacene transistors. Thin Solid Films, 669, 29-33. https://doi.org/10.1016/j.tsf.2018.10.024

@article{61f73ba0939f400580999d072dcddb15,

title = "Iodine doping enabled wide range threshold voltage modulation in pentacene transistors",

abstract = "We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm2/Vs and on/off ratio ~105.",

author = "Wang, {Yu Wu} and Chang, {Yu Chung} and Hong, {Ming Yue}",

year = "2019",

month = jan

day = "1",

doi = "10.1016/j.tsf.2018.10.024",

language = "English",

volume = "669",

pages = "29--33",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Iodine doping enabled wide range threshold voltage modulation in pentacene transistors

AU - Wang, Yu Wu

AU - Chang, Yu Chung

AU - Hong, Ming Yue

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm2/Vs and on/off ratio ~105.

AB - We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm2/Vs and on/off ratio ~105.

UR - http://www.scopus.com/inward/record.url?scp=85055331059&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85055331059&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2018.10.024

DO - 10.1016/j.tsf.2018.10.024

M3 - Article

AN - SCOPUS:85055331059

VL - 669

SP - 29

EP - 33

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

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10.1016/j.tsf.2018.10.024