Iodine doping enabled wide range threshold voltage modulation in pentacene transistors

Yu Wu Wang; Yu Chung Chang; Ming Yue Hong

doi:10.1016/j.tsf.2018.10.024

Iodine doping enabled wide range threshold voltage modulation in pentacene transistors

Yu Wu Wang, Yu Chung Chang, Ming Yue Hong

Research output: Contribution to journal › Article

Abstract

We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm²/Vs and on/off ratio ~10⁵.

Original language	English
Pages (from-to)	29-33
Number of pages	5
Journal	Thin Solid Films
Volume	669
DOIs	https://doi.org/10.1016/j.tsf.2018.10.024
Publication status	Published - 2019 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Iodine doping enabled wide range threshold voltage modulation in pentacene transistors",

abstract = "We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm2/Vs and on/off ratio ~105.",

author = "Wang, {Yu Wu} and Chang, {Yu Chung} and Hong, {Ming Yue}",

year = "2019",

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AU - Wang, Yu Wu

AU - Chang, Yu Chung

AU - Hong, Ming Yue

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm2/Vs and on/off ratio ~105.

AB - We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm2/Vs and on/off ratio ~105.

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