Investigations of interdiffusion in InGaAsP multiple-quantum-well structures by photoreflectance

D. Y. Lin, W. C. Lin, F. L. Wu, J. S. Wu, Y. T. Pan, S. L. Lee, Y. S. Huang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We present the investigations of interdiffusion in InGaAsP multiple-quantum-well (MQW) structures using photoreflec tance (PR) and photoluminescence (PL) measurements. It is found that the degree of compositional intermixing induced by the processes of ion implantation and rapid thermal an nealing in MQW structures can be obtained through the en ergy shift of the 11H excitonic transition. Besides, the strain relaxation resulting from intermixing is studied through the high order excitonic transitions observed in PR spectra. It is found that the splitting energy between the 11H and 11L tran sitions decreases as a result of increasing the degree of inter mixing. Based on the theoretical calculation considering the strain effect and the different diffusion ratios between the group-Ill and group-V atoms, the data analysis have been done. It is pointed out that the diffusion coefficients and the ratio of diffusion rates between the group-V and group-III at oms has been enhanced by the P + ion implantation.

Original languageEnglish
Pages (from-to)791-795
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume206
Issue number5
DOIs
Publication statusPublished - 2009 May 1

Fingerprint

Semiconductor quantum wells
quantum wells
Ion implantation
ion implantation
Strain relaxation
Photoluminescence
Atoms
diffusion coefficient
photoluminescence
shift
atoms
energy
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "We present the investigations of interdiffusion in InGaAsP multiple-quantum-well (MQW) structures using photoreflec tance (PR) and photoluminescence (PL) measurements. It is found that the degree of compositional intermixing induced by the processes of ion implantation and rapid thermal an nealing in MQW structures can be obtained through the en ergy shift of the 11H excitonic transition. Besides, the strain relaxation resulting from intermixing is studied through the high order excitonic transitions observed in PR spectra. It is found that the splitting energy between the 11H and 11L tran sitions decreases as a result of increasing the degree of inter mixing. Based on the theoretical calculation considering the strain effect and the different diffusion ratios between the group-Ill and group-V atoms, the data analysis have been done. It is pointed out that the diffusion coefficients and the ratio of diffusion rates between the group-V and group-III at oms has been enhanced by the P + ion implantation.",
author = "Lin, {D. Y.} and Lin, {W. C.} and Wu, {F. L.} and Wu, {J. S.} and Pan, {Y. T.} and Lee, {S. L.} and Huang, {Y. S.}",
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Investigations of interdiffusion in InGaAsP multiple-quantum-well structures by photoreflectance. / Lin, D. Y.; Lin, W. C.; Wu, F. L.; Wu, J. S.; Pan, Y. T.; Lee, S. L.; Huang, Y. S.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 206, No. 5, 01.05.2009, p. 791-795.

Research output: Contribution to journalArticle

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AU - Lin, D. Y.

AU - Lin, W. C.

AU - Wu, F. L.

AU - Wu, J. S.

AU - Pan, Y. T.

AU - Lee, S. L.

AU - Huang, Y. S.

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AB - We present the investigations of interdiffusion in InGaAsP multiple-quantum-well (MQW) structures using photoreflec tance (PR) and photoluminescence (PL) measurements. It is found that the degree of compositional intermixing induced by the processes of ion implantation and rapid thermal an nealing in MQW structures can be obtained through the en ergy shift of the 11H excitonic transition. Besides, the strain relaxation resulting from intermixing is studied through the high order excitonic transitions observed in PR spectra. It is found that the splitting energy between the 11H and 11L tran sitions decreases as a result of increasing the degree of inter mixing. Based on the theoretical calculation considering the strain effect and the different diffusion ratios between the group-Ill and group-V atoms, the data analysis have been done. It is pointed out that the diffusion coefficients and the ratio of diffusion rates between the group-V and group-III at oms has been enhanced by the P + ion implantation.

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