Investigation on microstructure in GaN epitaxial growth on the stripe-patterned r-plane sapphire substrates

Hou Guang Chen, Tsung-Shine Ko, Li Chang, Yue Han Wu, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This study reports on the reduction of dislocations in the GaN grown on the stripe-patterned r-plane sapphire substrates via metal-organic chemical vapor deposition (MOCVD). The stripes oriented along the sapphire [1 1 2̄ 0] direction with asymmetrical side faces were fabricated by lithographic and wet-etching processes. The two etching sides of sapphire-striped mesa are {0 0 0 1} and {1 1̄ 0 1} faces. GaN grown on both etching facets exhibits different epitaxial relationships with the sapphire substrate. The GaN grown from the {0 0 0 1} side face of the sapphire mesa contains a low-dislocation density in the order of 107 cm-2. The interfacial regions between the GaN and patterned sapphire substrate are also studied to clarify the behavior of GaN epitaxial growth on the inclined sapphire faces and defect-reduction mechanism.

Original languageEnglish
Pages (from-to)1627-1631
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number7-9
DOIs
Publication statusPublished - 2008 Apr 1

Fingerprint

Aluminum Oxide
Epitaxial growth
Sapphire
sapphire
microstructure
Microstructure
Substrates
etching
mesas
Etching
Organic Chemicals
Wet etching
Organic chemicals
metalorganic chemical vapor deposition
flat surfaces
Chemical vapor deposition
Metals
Defects
defects

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Chen, Hou Guang ; Ko, Tsung-Shine ; Chang, Li ; Wu, Yue Han ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung. / Investigation on microstructure in GaN epitaxial growth on the stripe-patterned r-plane sapphire substrates. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 7-9. pp. 1627-1631.
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Investigation on microstructure in GaN epitaxial growth on the stripe-patterned r-plane sapphire substrates. / Chen, Hou Guang; Ko, Tsung-Shine; Chang, Li; Wu, Yue Han; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung.

In: Journal of Crystal Growth, Vol. 310, No. 7-9, 01.04.2008, p. 1627-1631.

Research output: Contribution to journalArticle

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AU - Chen, Hou Guang

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AU - Kuo, Hao Chung

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