Investigation of violet InGaN laser diodes with normal and reversed polarizations

Sheng Horng Yen, Yen Kuang Kuo, Meng Lun Tsai, Ta Cheng Hsu

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.

Original languageEnglish
Article number201118
JournalApplied Physics Letters
Volume91
Issue number20
DOIs
Publication statusPublished - 2007 Nov 23

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this