Investigation of violet InGaN laser diodes with normal and reversed polarizations

Sheng Horng Yen, Yen Kuang Kuo, Meng Lun Tsai, Ta Cheng Hsu

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.

Original languageEnglish
Article number201118
JournalApplied Physics Letters
Volume91
Issue number20
DOIs
Publication statusPublished - 2007 Nov 23

Fingerprint

semiconductor lasers
polarization
threshold currents
wavelengths
wurtzite
lasers
nitrides
polarity
diagrams
configurations

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Yen, Sheng Horng ; Kuo, Yen Kuang ; Tsai, Meng Lun ; Hsu, Ta Cheng. / Investigation of violet InGaN laser diodes with normal and reversed polarizations. In: Applied Physics Letters. 2007 ; Vol. 91, No. 20.
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Investigation of violet InGaN laser diodes with normal and reversed polarizations. / Yen, Sheng Horng; Kuo, Yen Kuang; Tsai, Meng Lun; Hsu, Ta Cheng.

In: Applied Physics Letters, Vol. 91, No. 20, 201118, 23.11.2007.

Research output: Contribution to journalArticle

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