Abstract
The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.
| Original language | English |
|---|---|
| Article number | 201118 |
| Journal | Applied Physics Letters |
| Volume | 91 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2007 Nov 23 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Investigation of violet InGaN laser diodes with normal and reversed polarizations. / Yen, Sheng Horng; Kuo, Yen Kuang; Tsai, Meng Lun; Hsu, Ta Cheng.
In: Applied Physics Letters, Vol. 91, No. 20, 201118, 23.11.2007.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation of violet InGaN laser diodes with normal and reversed polarizations
AU - Yen, Sheng Horng
AU - Kuo, Yen Kuang
AU - Tsai, Meng Lun
AU - Hsu, Ta Cheng
PY - 2007/11/23
Y1 - 2007/11/23
N2 - The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.
AB - The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.
UR - http://www.scopus.com/inward/record.url?scp=36249001076&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36249001076&partnerID=8YFLogxK
U2 - 10.1063/1.2815652
DO - 10.1063/1.2815652
M3 - Article
AN - SCOPUS:36249001076
VL - 91
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 20
M1 - 201118
ER -