Investigation of violet InGaN laser diodes with normal and reversed polarizations

Sheng Horng Yen; Yen Kuang Kuo; Meng Lun Tsai; Ta Cheng Hsu

doi:10.1063/1.2815652

Investigation of violet InGaN laser diodes with normal and reversed polarizations

Sheng Horng Yen, Yen Kuang Kuo, Meng Lun Tsai, Ta Cheng Hsu

Department of Physics

Research output: Contribution to journal › Article

22 Citations (Scopus)

Abstract

The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.

Original language	English
Article number	201118
Journal	Applied Physics Letters
Volume	91
Issue number	20
DOIs	https://doi.org/10.1063/1.2815652
Publication status	Published - 2007 Nov 23

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2815652

Fingerprint Dive into the research topics of 'Investigation of violet InGaN laser diodes with normal and reversed polarizations'. Together they form a unique fingerprint.

Cite this

Yen, S. H., Kuo, Y. K., Tsai, M. L., & Hsu, T. C. (2007). Investigation of violet InGaN laser diodes with normal and reversed polarizations. Applied Physics Letters, 91(20), [201118]. https://doi.org/10.1063/1.2815652

@article{97e91797baa24985bcd229daf903a336,

title = "Investigation of violet InGaN laser diodes with normal and reversed polarizations",

abstract = "The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.",

author = "Yen, {Sheng Horng} and Kuo, {Yen Kuang} and Tsai, {Meng Lun} and Hsu, {Ta Cheng}",

year = "2007",

month = nov,

day = "23",

doi = "10.1063/1.2815652",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

}

TY - JOUR

T1 - Investigation of violet InGaN laser diodes with normal and reversed polarizations

AU - Yen, Sheng Horng

AU - Kuo, Yen Kuang

AU - Tsai, Meng Lun

AU - Hsu, Ta Cheng

PY - 2007/11/23

Y1 - 2007/11/23

N2 - The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.

AB - The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.

UR - http://www.scopus.com/inward/record.url?scp=36249001076&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36249001076&partnerID=8YFLogxK

U2 - 10.1063/1.2815652

DO - 10.1063/1.2815652

M3 - Article

AN - SCOPUS:36249001076

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 201118

ER -