Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN

Yow Jon Lin, Ching Ting Lee

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10-5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.

Original languageEnglish
Pages (from-to)3986-3988
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number24
DOIs
Publication statusPublished - 2000 Dec 11

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surface treatment
electric contacts
contact resistance
x ray spectroscopy
photoelectron spectroscopy
oxides
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10-5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.",
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Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN. / Lin, Yow Jon; Lee, Ching Ting.

In: Applied Physics Letters, Vol. 77, No. 24, 11.12.2000, p. 3986-3988.

Research output: Contribution to journalArticle

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N2 - To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10-5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.

AB - To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10-5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.

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