Investigation of optical performance of InGaN MQW LED with thin last barrier

Sheng Horng Yen; Meng Lun Tsai; Miao Chan Tsai; Shu Jeng Chang; Yen Kuang Kuo

doi:10.1109/LPT.2010.2085427

Investigation of optical performance of InGaN MQW LED with thin last barrier

Sheng Horng Yen, Meng Lun Tsai, Miao Chan Tsai, Shu Jeng Chang, Yen Kuang Kuo

Department of Physics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

In this work, the optical performance of the blue InGaN light-emitting diodes (LEDs) with varied last barrier thickness is investigated. The experimental measurement shows that the optical power of the InGaN LED with thinner last barrier is apparently improved. According to simulation analysis, thinner last barrier is beneficial for increasing the hole injection efficiency and holes can inject into more quantum wells within the active region. With better hole injection efficiency, the leakage electrons from active region to p-side layers are depressed correspondingly. Therefore, the radiative recombination and optical power are enhanced accordingly when the thinner last barrier is utilized.

Original language	English
Article number	5598516
Pages (from-to)	1787-1789
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	24
DOIs	https://doi.org/10.1109/LPT.2010.2085427
Publication status	Published - 2010 Dec 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{f27d17be36d04fae9d9e97661021720c,

title = "Investigation of optical performance of InGaN MQW LED with thin last barrier",

abstract = "In this work, the optical performance of the blue InGaN light-emitting diodes (LEDs) with varied last barrier thickness is investigated. The experimental measurement shows that the optical power of the InGaN LED with thinner last barrier is apparently improved. According to simulation analysis, thinner last barrier is beneficial for increasing the hole injection efficiency and holes can inject into more quantum wells within the active region. With better hole injection efficiency, the leakage electrons from active region to p-side layers are depressed correspondingly. Therefore, the radiative recombination and optical power are enhanced accordingly when the thinner last barrier is utilized.",

author = "Yen, {Sheng Horng} and Tsai, {Meng Lun} and Tsai, {Miao Chan} and Chang, {Shu Jeng} and Kuo, {Yen Kuang}",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/LPT.2010.2085427",

language = "English",

volume = "22",

pages = "1787--1789",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "24",

}

TY - JOUR

T1 - Investigation of optical performance of InGaN MQW LED with thin last barrier

AU - Yen, Sheng Horng

AU - Tsai, Meng Lun

AU - Tsai, Miao Chan

AU - Chang, Shu Jeng

AU - Kuo, Yen Kuang

PY - 2010/12/1

Y1 - 2010/12/1

N2 - In this work, the optical performance of the blue InGaN light-emitting diodes (LEDs) with varied last barrier thickness is investigated. The experimental measurement shows that the optical power of the InGaN LED with thinner last barrier is apparently improved. According to simulation analysis, thinner last barrier is beneficial for increasing the hole injection efficiency and holes can inject into more quantum wells within the active region. With better hole injection efficiency, the leakage electrons from active region to p-side layers are depressed correspondingly. Therefore, the radiative recombination and optical power are enhanced accordingly when the thinner last barrier is utilized.

AB - In this work, the optical performance of the blue InGaN light-emitting diodes (LEDs) with varied last barrier thickness is investigated. The experimental measurement shows that the optical power of the InGaN LED with thinner last barrier is apparently improved. According to simulation analysis, thinner last barrier is beneficial for increasing the hole injection efficiency and holes can inject into more quantum wells within the active region. With better hole injection efficiency, the leakage electrons from active region to p-side layers are depressed correspondingly. Therefore, the radiative recombination and optical power are enhanced accordingly when the thinner last barrier is utilized.

UR - http://www.scopus.com/inward/record.url?scp=78649440391&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649440391&partnerID=8YFLogxK

U2 - 10.1109/LPT.2010.2085427

DO - 10.1109/LPT.2010.2085427

M3 - Article

AN - SCOPUS:78649440391

VL - 22

SP - 1787

EP - 1789

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 24

M1 - 5598516

ER -