Investigation of optical performance of InGaN MQW LED with thin last barrier

Sheng Horng Yen, Meng Lun Tsai, Miao Chan Tsai, Shu Jeng Chang, Yen Kuang Kuo

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

In this work, the optical performance of the blue InGaN light-emitting diodes (LEDs) with varied last barrier thickness is investigated. The experimental measurement shows that the optical power of the InGaN LED with thinner last barrier is apparently improved. According to simulation analysis, thinner last barrier is beneficial for increasing the hole injection efficiency and holes can inject into more quantum wells within the active region. With better hole injection efficiency, the leakage electrons from active region to p-side layers are depressed correspondingly. Therefore, the radiative recombination and optical power are enhanced accordingly when the thinner last barrier is utilized.

Original languageEnglish
Article number5598516
Pages (from-to)1787-1789
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number24
DOIs
Publication statusPublished - 2010 Dec 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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