Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures

Yi An Chang, Yih Ting Kuo, Jih Yuan Chang, Yen Kuang Kuo

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The effect of using chirped multiple quantum-well (MQW) structures in InGaN green light-emitting diodes (LEDs) is numerically investigated. An active structure, which is with both thick QWs with low indium composition on the p-side and thin QWs with high indium composition next to the n-region, is presented in this study. The thickness and indium composition in each single QW is specifically tuned to emit the same green emission spectrum. Comparing with conventional active structure design of green LEDs, which is using uniform MQWs, the output power is increased by 27% at 20 mA, and by 15% at 100 mA current injections. This improvement is mainly attributed to the enhanced efficiency of carrier injection into QWs and the improved capability of carrier transport.

Original languageEnglish
Pages (from-to)2205-2207
Number of pages3
JournalOptics Letters
Volume37
Issue number12
DOIs
Publication statusPublished - 2012 Jun 15

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indium
light emitting diodes
quantum wells
carrier injection
emission spectra
injection
output

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

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title = "Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures",
abstract = "The effect of using chirped multiple quantum-well (MQW) structures in InGaN green light-emitting diodes (LEDs) is numerically investigated. An active structure, which is with both thick QWs with low indium composition on the p-side and thin QWs with high indium composition next to the n-region, is presented in this study. The thickness and indium composition in each single QW is specifically tuned to emit the same green emission spectrum. Comparing with conventional active structure design of green LEDs, which is using uniform MQWs, the output power is increased by 27{\%} at 20 mA, and by 15{\%} at 100 mA current injections. This improvement is mainly attributed to the enhanced efficiency of carrier injection into QWs and the improved capability of carrier transport.",
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Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures. / Chang, Yi An; Kuo, Yih Ting; Chang, Jih Yuan; Kuo, Yen Kuang.

In: Optics Letters, Vol. 37, No. 12, 15.06.2012, p. 2205-2207.

Research output: Contribution to journalArticle

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