Investigation of indium doping and incorporation in aigAaS/gAaS double-barrier resonant tunnelling structures

J. S. Wu, K. H. Chang, C. P. Lee, C. Y. Chang, D. G. Liu, D. C. Liou

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In doping and incorporation in the barrier layers of AlGaAs/ GaAs double-barrier resonant tunnelling structures (DBRTSs) have been studied. It was found that the peak-to-valley current ratio (PVCR) can be improved by the proper amount of In doping. This is attributed to the improvement in the quality of the AlGaAs barrier layers due to the high surface migration rate of In atoms that reduces group III vacancies. Also pseudomorphic InxAl0.5Ga0.5),1-xAs/GaAs (x = 012) strained-layer DBRTSs have been fabricated by incorporating a sufficient amount of In into the AlGaAs barrier layers. PVCRs as high as 27.5 at 77 K have been obtained. This is the first realisation of such DBRTSs with lattice-mismatched quaternary barrier layers.

Original languageEnglish
Pages (from-to)428-430
Number of pages3
JournalElectronics Letters
Volume27
Issue number5
DOIs
Publication statusPublished - 1991 Feb 28

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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