Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer

Yi An Chang, Jih Yuan Chang, Yih Ting Kuo, Yen Kuang Kuo

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23 Citations (Scopus)

Abstract

In this study, a green InGaN light-emitting diode with asymmetric AlGaN composition-graded barriers and without the use of an AlGaN electron blocking layer is presented to possess markedly enhanced optical and electrical performance. The simulation results show that the output power is increased by 10.0% and 33.2%, which corresponds to an increment of 7% and 29.4% in internal quantum efficiency, at 100 mA when the conventional GaN barriers are replaced by the asymmetric AlGaN composition-graded barriers and the commonly used AlGaN electron blocking layer is removed. The simulation results suggest that the improved device performance is due mainly to the markedly enhanced injection of holes into the active region.

Original languageEnglish
Article number251102
JournalApplied Physics Letters
Volume100
Issue number25
DOIs
Publication statusPublished - 2012 Jun 18

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light emitting diodes
electrons
quantum efficiency
simulation
injection
output

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "In this study, a green InGaN light-emitting diode with asymmetric AlGaN composition-graded barriers and without the use of an AlGaN electron blocking layer is presented to possess markedly enhanced optical and electrical performance. The simulation results show that the output power is increased by 10.0{\%} and 33.2{\%}, which corresponds to an increment of 7{\%} and 29.4{\%} in internal quantum efficiency, at 100 mA when the conventional GaN barriers are replaced by the asymmetric AlGaN composition-graded barriers and the commonly used AlGaN electron blocking layer is removed. The simulation results suggest that the improved device performance is due mainly to the markedly enhanced injection of holes into the active region.",
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AU - Chang, Yi An

AU - Chang, Jih Yuan

AU - Kuo, Yih Ting

AU - Kuo, Yen Kuang

PY - 2012/6/18

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AB - In this study, a green InGaN light-emitting diode with asymmetric AlGaN composition-graded barriers and without the use of an AlGaN electron blocking layer is presented to possess markedly enhanced optical and electrical performance. The simulation results show that the output power is increased by 10.0% and 33.2%, which corresponds to an increment of 7% and 29.4% in internal quantum efficiency, at 100 mA when the conventional GaN barriers are replaced by the asymmetric AlGaN composition-graded barriers and the commonly used AlGaN electron blocking layer is removed. The simulation results suggest that the improved device performance is due mainly to the markedly enhanced injection of holes into the active region.

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