Investigation of electronic transport in lateral NiFe/Al2 O 3 /p-Si/Al2 O3 /NiFe junctions

Y. C. Lee, C. W. Lin, H. M. Lee, Lance Horng, Jong-Ching Wu

Research output: Contribution to journalArticle

Abstract

A series of lateral junctions consisting of NiFe/Al2O 3/p-Si/Al2O3/NiFe have been investigated for the understanding of manipulating the electronic spin in semiconducting channel. Devices with various conducting channel lengths between two electrodes were fabricated using a top-down technique. An ion beam sputtering was used for the required film stack and an electron beam lithography in combination with ion beam etching technique were adopted for patterning. The current-voltage measurements reveal a remarkable phenomenon of current enhancement, indicating a formation of the interface state in such devices. This transport behavior associated with trapping assistance has also been demonstrated with a fitting based on Poole-Frenkel effect. The results also show that a transition from trapping assisted process to direct tunneling process occurs when the semiconducting channel length is below 1 μm. In addition, the current enhancement may be suppressed with increasing the thickness of the oxide layer.

Original languageEnglish
Article number6028217
Pages (from-to)4147-4150
Number of pages4
JournalIEEE Transactions on Magnetics
Volume47
Issue number10
DOIs
Publication statusPublished - 2011 Oct 1

Fingerprint

Ion beams
Electron beam lithography
Interface states
Voltage measurement
Electric current measurement
Oxides
Sputtering
Etching
Electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{59a213dd6711432b9817d01ce13b12fa,
title = "Investigation of electronic transport in lateral NiFe/Al2 O 3 /p-Si/Al2 O3 /NiFe junctions",
abstract = "A series of lateral junctions consisting of NiFe/Al2O 3/p-Si/Al2O3/NiFe have been investigated for the understanding of manipulating the electronic spin in semiconducting channel. Devices with various conducting channel lengths between two electrodes were fabricated using a top-down technique. An ion beam sputtering was used for the required film stack and an electron beam lithography in combination with ion beam etching technique were adopted for patterning. The current-voltage measurements reveal a remarkable phenomenon of current enhancement, indicating a formation of the interface state in such devices. This transport behavior associated with trapping assistance has also been demonstrated with a fitting based on Poole-Frenkel effect. The results also show that a transition from trapping assisted process to direct tunneling process occurs when the semiconducting channel length is below 1 μm. In addition, the current enhancement may be suppressed with increasing the thickness of the oxide layer.",
author = "Lee, {Y. C.} and Lin, {C. W.} and Lee, {H. M.} and Lance Horng and Jong-Ching Wu",
year = "2011",
month = "10",
day = "1",
doi = "10.1109/TMAG.2011.2153192",
language = "English",
volume = "47",
pages = "4147--4150",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

Investigation of electronic transport in lateral NiFe/Al2 O 3 /p-Si/Al2 O3 /NiFe junctions. / Lee, Y. C.; Lin, C. W.; Lee, H. M.; Horng, Lance; Wu, Jong-Ching.

In: IEEE Transactions on Magnetics, Vol. 47, No. 10, 6028217, 01.10.2011, p. 4147-4150.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of electronic transport in lateral NiFe/Al2 O 3 /p-Si/Al2 O3 /NiFe junctions

AU - Lee, Y. C.

AU - Lin, C. W.

AU - Lee, H. M.

AU - Horng, Lance

AU - Wu, Jong-Ching

PY - 2011/10/1

Y1 - 2011/10/1

N2 - A series of lateral junctions consisting of NiFe/Al2O 3/p-Si/Al2O3/NiFe have been investigated for the understanding of manipulating the electronic spin in semiconducting channel. Devices with various conducting channel lengths between two electrodes were fabricated using a top-down technique. An ion beam sputtering was used for the required film stack and an electron beam lithography in combination with ion beam etching technique were adopted for patterning. The current-voltage measurements reveal a remarkable phenomenon of current enhancement, indicating a formation of the interface state in such devices. This transport behavior associated with trapping assistance has also been demonstrated with a fitting based on Poole-Frenkel effect. The results also show that a transition from trapping assisted process to direct tunneling process occurs when the semiconducting channel length is below 1 μm. In addition, the current enhancement may be suppressed with increasing the thickness of the oxide layer.

AB - A series of lateral junctions consisting of NiFe/Al2O 3/p-Si/Al2O3/NiFe have been investigated for the understanding of manipulating the electronic spin in semiconducting channel. Devices with various conducting channel lengths between two electrodes were fabricated using a top-down technique. An ion beam sputtering was used for the required film stack and an electron beam lithography in combination with ion beam etching technique were adopted for patterning. The current-voltage measurements reveal a remarkable phenomenon of current enhancement, indicating a formation of the interface state in such devices. This transport behavior associated with trapping assistance has also been demonstrated with a fitting based on Poole-Frenkel effect. The results also show that a transition from trapping assisted process to direct tunneling process occurs when the semiconducting channel length is below 1 μm. In addition, the current enhancement may be suppressed with increasing the thickness of the oxide layer.

UR - http://www.scopus.com/inward/record.url?scp=80053557342&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053557342&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2011.2153192

DO - 10.1109/TMAG.2011.2153192

M3 - Article

VL - 47

SP - 4147

EP - 4150

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 10

M1 - 6028217

ER -