Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The reduced peak efficiency and the efficiency droop afterward, i.e. the degraded efficiency, of blue InGaN lightemitting diodes (LEDs) is investigated numerically. It is depicted that the joint effects of multiple factors, including the influences of polarization-induced electric field, the phenomenon of current crowding, and the Auger and ShockleyRead-Hall (SRH) recombinations, are responsible for the degraded efficiency. Among them, the severe SRH recombination due to the poor crystalline quality is the main cause of reduced peak efficiency, while the serious Auger recombination resulted from high Auger recombination coefficient and non-uniform carrier distribution of the active region is the major factor contributing to efficiency droop. It is shown that the strong built-in polarization field and the crowded current flow will result in the nonuniform carrier distribution, and thus enlarge the Auger losses and the efficiency droop.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XXIII
EditorsBernd Witzigmann, Yasuhiko Arakawa, Fritz Henneberger, Marek Osinski
PublisherSPIE
ISBN (Electronic)9781628414479
DOIs
Publication statusPublished - 2015 Jan 1
Event23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices - San Francisco, United States
Duration: 2015 Feb 92015 Feb 12

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9357
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

Other23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices
CountryUnited States
CitySan Francisco
Period15-02-0915-02-12

Fingerprint

InGaN
Quantum Well
Diode
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
Recombination
Polarization
recombination coefficient
crowding
polarization
Electric Field
Diodes
diodes
Electric fields
Crystalline materials
electric fields
causes
Coefficient

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kuo, Y-K., & Chang, J-Y. (2015). Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes. In B. Witzigmann, Y. Arakawa, F. Henneberger, & M. Osinski (Eds.), Physics and Simulation of Optoelectronic Devices XXIII [93571L] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9357). SPIE. https://doi.org/10.1117/12.2078718
Kuo, Yen-Kuang ; Chang, Jih-Yuan. / Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes. Physics and Simulation of Optoelectronic Devices XXIII. editor / Bernd Witzigmann ; Yasuhiko Arakawa ; Fritz Henneberger ; Marek Osinski. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "The reduced peak efficiency and the efficiency droop afterward, i.e. the degraded efficiency, of blue InGaN lightemitting diodes (LEDs) is investigated numerically. It is depicted that the joint effects of multiple factors, including the influences of polarization-induced electric field, the phenomenon of current crowding, and the Auger and ShockleyRead-Hall (SRH) recombinations, are responsible for the degraded efficiency. Among them, the severe SRH recombination due to the poor crystalline quality is the main cause of reduced peak efficiency, while the serious Auger recombination resulted from high Auger recombination coefficient and non-uniform carrier distribution of the active region is the major factor contributing to efficiency droop. It is shown that the strong built-in polarization field and the crowded current flow will result in the nonuniform carrier distribution, and thus enlarge the Auger losses and the efficiency droop.",
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Kuo, Y-K & Chang, J-Y 2015, Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes. in B Witzigmann, Y Arakawa, F Henneberger & M Osinski (eds), Physics and Simulation of Optoelectronic Devices XXIII., 93571L, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9357, SPIE, 23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices, San Francisco, United States, 15-02-09. https://doi.org/10.1117/12.2078718

Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes. / Kuo, Yen-Kuang; Chang, Jih-Yuan.

Physics and Simulation of Optoelectronic Devices XXIII. ed. / Bernd Witzigmann; Yasuhiko Arakawa; Fritz Henneberger; Marek Osinski. SPIE, 2015. 93571L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9357).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - The reduced peak efficiency and the efficiency droop afterward, i.e. the degraded efficiency, of blue InGaN lightemitting diodes (LEDs) is investigated numerically. It is depicted that the joint effects of multiple factors, including the influences of polarization-induced electric field, the phenomenon of current crowding, and the Auger and ShockleyRead-Hall (SRH) recombinations, are responsible for the degraded efficiency. Among them, the severe SRH recombination due to the poor crystalline quality is the main cause of reduced peak efficiency, while the serious Auger recombination resulted from high Auger recombination coefficient and non-uniform carrier distribution of the active region is the major factor contributing to efficiency droop. It is shown that the strong built-in polarization field and the crowded current flow will result in the nonuniform carrier distribution, and thus enlarge the Auger losses and the efficiency droop.

AB - The reduced peak efficiency and the efficiency droop afterward, i.e. the degraded efficiency, of blue InGaN lightemitting diodes (LEDs) is investigated numerically. It is depicted that the joint effects of multiple factors, including the influences of polarization-induced electric field, the phenomenon of current crowding, and the Auger and ShockleyRead-Hall (SRH) recombinations, are responsible for the degraded efficiency. Among them, the severe SRH recombination due to the poor crystalline quality is the main cause of reduced peak efficiency, while the serious Auger recombination resulted from high Auger recombination coefficient and non-uniform carrier distribution of the active region is the major factor contributing to efficiency droop. It is shown that the strong built-in polarization field and the crowded current flow will result in the nonuniform carrier distribution, and thus enlarge the Auger losses and the efficiency droop.

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Kuo Y-K, Chang J-Y. Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes. In Witzigmann B, Arakawa Y, Henneberger F, Osinski M, editors, Physics and Simulation of Optoelectronic Devices XXIII. SPIE. 2015. 93571L. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2078718