Abstract
The reduced peak efficiency and the efficiency droop afterward, i.e. the degraded efficiency, of blue InGaN lightemitting diodes (LEDs) is investigated numerically. It is depicted that the joint effects of multiple factors, including the influences of polarization-induced electric field, the phenomenon of current crowding, and the Auger and ShockleyRead-Hall (SRH) recombinations, are responsible for the degraded efficiency. Among them, the severe SRH recombination due to the poor crystalline quality is the main cause of reduced peak efficiency, while the serious Auger recombination resulted from high Auger recombination coefficient and non-uniform carrier distribution of the active region is the major factor contributing to efficiency droop. It is shown that the strong built-in polarization field and the crowded current flow will result in the nonuniform carrier distribution, and thus enlarge the Auger losses and the efficiency droop.
| Original language | English |
|---|---|
| Title of host publication | Physics and Simulation of Optoelectronic Devices XXIII |
| Editors | Bernd Witzigmann, Yasuhiko Arakawa, Fritz Henneberger, Marek Osinski |
| Publisher | SPIE |
| ISBN (Electronic) | 9781628414479 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
| Event | 23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices - San Francisco, United States Duration: 2015 Feb 9 → 2015 Feb 12 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 9357 |
| ISSN (Print) | 0277-786X |
| ISSN (Electronic) | 1996-756X |
Other
| Other | 23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices |
|---|---|
| Country | United States |
| City | San Francisco |
| Period | 15-02-09 → 15-02-12 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
}
Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes. / Kuo, Yen-Kuang; Chang, Jih-Yuan.
Physics and Simulation of Optoelectronic Devices XXIII. ed. / Bernd Witzigmann; Yasuhiko Arakawa; Fritz Henneberger; Marek Osinski. SPIE, 2015. 93571L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9357).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes
AU - Kuo, Yen-Kuang
AU - Chang, Jih-Yuan
PY - 2015/1/1
Y1 - 2015/1/1
N2 - The reduced peak efficiency and the efficiency droop afterward, i.e. the degraded efficiency, of blue InGaN lightemitting diodes (LEDs) is investigated numerically. It is depicted that the joint effects of multiple factors, including the influences of polarization-induced electric field, the phenomenon of current crowding, and the Auger and ShockleyRead-Hall (SRH) recombinations, are responsible for the degraded efficiency. Among them, the severe SRH recombination due to the poor crystalline quality is the main cause of reduced peak efficiency, while the serious Auger recombination resulted from high Auger recombination coefficient and non-uniform carrier distribution of the active region is the major factor contributing to efficiency droop. It is shown that the strong built-in polarization field and the crowded current flow will result in the nonuniform carrier distribution, and thus enlarge the Auger losses and the efficiency droop.
AB - The reduced peak efficiency and the efficiency droop afterward, i.e. the degraded efficiency, of blue InGaN lightemitting diodes (LEDs) is investigated numerically. It is depicted that the joint effects of multiple factors, including the influences of polarization-induced electric field, the phenomenon of current crowding, and the Auger and ShockleyRead-Hall (SRH) recombinations, are responsible for the degraded efficiency. Among them, the severe SRH recombination due to the poor crystalline quality is the main cause of reduced peak efficiency, while the serious Auger recombination resulted from high Auger recombination coefficient and non-uniform carrier distribution of the active region is the major factor contributing to efficiency droop. It is shown that the strong built-in polarization field and the crowded current flow will result in the nonuniform carrier distribution, and thus enlarge the Auger losses and the efficiency droop.
UR - http://www.scopus.com/inward/record.url?scp=84947803595&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84947803595&partnerID=8YFLogxK
U2 - 10.1117/12.2078718
DO - 10.1117/12.2078718
M3 - Conference contribution
AN - SCOPUS:84947803595
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Physics and Simulation of Optoelectronic Devices XXIII
A2 - Witzigmann, Bernd
A2 - Arakawa, Yasuhiko
A2 - Henneberger, Fritz
A2 - Osinski, Marek
PB - SPIE
ER -