Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes

Yen-Kuang Kuo; Jih-Yuan Chang

doi:10.1117/12.2078718

Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes

Yen-Kuang Kuo, Jih-Yuan Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The reduced peak efficiency and the efficiency droop afterward, i.e. the degraded efficiency, of blue InGaN lightemitting diodes (LEDs) is investigated numerically. It is depicted that the joint effects of multiple factors, including the influences of polarization-induced electric field, the phenomenon of current crowding, and the Auger and ShockleyRead-Hall (SRH) recombinations, are responsible for the degraded efficiency. Among them, the severe SRH recombination due to the poor crystalline quality is the main cause of reduced peak efficiency, while the serious Auger recombination resulted from high Auger recombination coefficient and non-uniform carrier distribution of the active region is the major factor contributing to efficiency droop. It is shown that the strong built-in polarization field and the crowded current flow will result in the nonuniform carrier distribution, and thus enlarge the Auger losses and the efficiency droop.

Original language	English
Title of host publication	Physics and Simulation of Optoelectronic Devices XXIII
Editors	Bernd Witzigmann, Yasuhiko Arakawa, Fritz Henneberger, Marek Osinski
Publisher	SPIE
ISBN (Electronic)	9781628414479
DOIs	https://doi.org/10.1117/12.2078718
Publication status	Published - 2015 Jan 1
Event	23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices - San Francisco, United States Duration: 2015 Feb 9 → 2015 Feb 12

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9357
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices
Country	United States
City	San Francisco
Period	15-02-09 → 15-02-12

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Kuo, Y-K., & Chang, J-Y. (2015). Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes. In B. Witzigmann, Y. Arakawa, F. Henneberger, & M. Osinski (Eds.), Physics and Simulation of Optoelectronic Devices XXIII [93571L] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9357). SPIE. https://doi.org/10.1117/12.2078718

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abstract = "The reduced peak efficiency and the efficiency droop afterward, i.e. the degraded efficiency, of blue InGaN lightemitting diodes (LEDs) is investigated numerically. It is depicted that the joint effects of multiple factors, including the influences of polarization-induced electric field, the phenomenon of current crowding, and the Auger and ShockleyRead-Hall (SRH) recombinations, are responsible for the degraded efficiency. Among them, the severe SRH recombination due to the poor crystalline quality is the main cause of reduced peak efficiency, while the serious Auger recombination resulted from high Auger recombination coefficient and non-uniform carrier distribution of the active region is the major factor contributing to efficiency droop. It is shown that the strong built-in polarization field and the crowded current flow will result in the nonuniform carrier distribution, and thus enlarge the Auger losses and the efficiency droop.",

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Kuo, Y-K & Chang, J-Y 2015, Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes. in B Witzigmann, Y Arakawa, F Henneberger & M Osinski (eds), Physics and Simulation of Optoelectronic Devices XXIII., 93571L, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9357, SPIE, 23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices, San Francisco, United States, 15-02-09. https://doi.org/10.1117/12.2078718

Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes. / Kuo, Yen-Kuang ; Chang, Jih-Yuan.

Physics and Simulation of Optoelectronic Devices XXIII. ed. / Bernd Witzigmann; Yasuhiko Arakawa; Fritz Henneberger; Marek Osinski. SPIE, 2015. 93571L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9357).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Access to Document

10.1117/12.2078718