The degradation of ohmic performance of oxidized Au/Ni/Mg-doped GaN was investigated. Cserveny's concept was applied in the investigation and x-ray photoelectron spectroscopy was performed. It was found that an increase of hole concentration of NiOx would lead to the increasing barrier height and the increasing specific contact resistance of oxidized Au/Ni/Mg-doped GaN.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)