Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN

Yow-Jon Lin; Zhen Dao Li; Chou Wei Hsu; Feng Tso Chien; Ching Ting Lee; Sheng Tien Shao; Hsing Cheng Chang

doi:10.1063/1.1569991

Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN

Yow-Jon Lin, Zhen Dao Li, Chou Wei Hsu, Feng Tso Chien, Ching Ting Lee, Sheng Tien Shao, Hsing Cheng Chang

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The degradation of ohmic performance of oxidized Au/Ni/Mg-doped GaN was investigated. Cserveny's concept was applied in the investigation and x-ray photoelectron spectroscopy was performed. It was found that an increase of hole concentration of NiO_x would lead to the increasing barrier height and the increasing specific contact resistance of oxidized Au/Ni/Mg-doped GaN.

Original language	English
Pages (from-to)	2817-2819
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	17
DOIs	https://doi.org/10.1063/1.1569991
Publication status	Published - 2003 Apr 28

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1569991

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abstract = "The degradation of ohmic performance of oxidized Au/Ni/Mg-doped GaN was investigated. Cserveny's concept was applied in the investigation and x-ray photoelectron spectroscopy was performed. It was found that an increase of hole concentration of NiOx would lead to the increasing barrier height and the increasing specific contact resistance of oxidized Au/Ni/Mg-doped GaN.",

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AU - Shao, Sheng Tien

AU - Chang, Hsing Cheng

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AB - The degradation of ohmic performance of oxidized Au/Ni/Mg-doped GaN was investigated. Cserveny's concept was applied in the investigation and x-ray photoelectron spectroscopy was performed. It was found that an increase of hole concentration of NiOx would lead to the increasing barrier height and the increasing specific contact resistance of oxidized Au/Ni/Mg-doped GaN.

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