Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN

Yow-Jon Lin, Zhen Dao Li, Chou Wei Hsu, Feng Tso Chien, Ching Ting Lee, Sheng Tien Shao, Hsing Cheng Chang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The degradation of ohmic performance of oxidized Au/Ni/Mg-doped GaN was investigated. Cserveny's concept was applied in the investigation and x-ray photoelectron spectroscopy was performed. It was found that an increase of hole concentration of NiOx would lead to the increasing barrier height and the increasing specific contact resistance of oxidized Au/Ni/Mg-doped GaN.

Original languageEnglish
Pages (from-to)2817-2819
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number17
DOIs
Publication statusPublished - 2003 Apr 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN'. Together they form a unique fingerprint.

  • Cite this

    Lin, Y-J., Li, Z. D., Hsu, C. W., Chien, F. T., Lee, C. T., Shao, S. T., & Chang, H. C. (2003). Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN. Applied Physics Letters, 82(17), 2817-2819. https://doi.org/10.1063/1.1569991