Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN

Yow-Jon Lin; Zhen Dao Li; Chou Wei Hsu; Feng Tso Chien; Ching Ting Lee; Sheng Tien Shao; Hsing Cheng Chang

doi:10.1063/1.1569991

Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN

Yow-Jon Lin, Zhen Dao Li, Chou Wei Hsu, Feng Tso Chien, Ching Ting Lee, Sheng Tien Shao, Hsing Cheng Chang

Graduate Institute of Photonics

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

The degradation of ohmic performance of oxidized Au/Ni/Mg-doped GaN was investigated. Cserveny's concept was applied in the investigation and x-ray photoelectron spectroscopy was performed. It was found that an increase of hole concentration of NiO_x would lead to the increasing barrier height and the increasing specific contact resistance of oxidized Au/Ni/Mg-doped GaN.

Original language	English
Pages (from-to)	2817-2819
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	17
DOIs	https://doi.org/10.1063/1.1569991
Publication status	Published - 2003 Apr 28

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Lin, Y-J., Li, Z. D., Hsu, C. W., Chien, F. T., Lee, C. T., Shao, S. T., & Chang, H. C. (2003). Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN. Applied Physics Letters, 82(17), 2817-2819. https://doi.org/10.1063/1.1569991

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10.1063/1.1569991