Abstract
The concept of a step-like quantum well is proposed with the purpose to reduce the influence of electrostatic field resulting from the piezoelectric effect on the optical performance of blue InGaN light-emitting diodes. Particularly, the optical properties of the LED structures with the In 0.23Ga0.77N single quantum well, In0.20Ga 0.80N/In0.26Ga0.74N step-like quantum well, and In0.26Ga0.74N/In0.20Ga0.80N step-like quantum well are numerically investigated in detail. Simulation results show that the In0.20Ga0.80N/In 0.26Ga0.74N step-like-quantum-well LED structure has the best optical performance in virtue of the improvement in spatial overlap of electrons and holes in the quantum well.
| Original language | English |
|---|---|
| Pages (from-to) | 621-626 |
| Number of pages | 6 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 104 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2011 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Investigation of blue InGaN light-emitting diodes with step-like quantum well. / Tsai, Miao Chan; Yen, Sheng Horng; Kuo, Yen Kuang.
In: Applied Physics A: Materials Science and Processing, Vol. 104, No. 2, 01.08.2011, p. 621-626.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation of blue InGaN light-emitting diodes with step-like quantum well
AU - Tsai, Miao Chan
AU - Yen, Sheng Horng
AU - Kuo, Yen Kuang
PY - 2011/8/1
Y1 - 2011/8/1
N2 - The concept of a step-like quantum well is proposed with the purpose to reduce the influence of electrostatic field resulting from the piezoelectric effect on the optical performance of blue InGaN light-emitting diodes. Particularly, the optical properties of the LED structures with the In 0.23Ga0.77N single quantum well, In0.20Ga 0.80N/In0.26Ga0.74N step-like quantum well, and In0.26Ga0.74N/In0.20Ga0.80N step-like quantum well are numerically investigated in detail. Simulation results show that the In0.20Ga0.80N/In 0.26Ga0.74N step-like-quantum-well LED structure has the best optical performance in virtue of the improvement in spatial overlap of electrons and holes in the quantum well.
AB - The concept of a step-like quantum well is proposed with the purpose to reduce the influence of electrostatic field resulting from the piezoelectric effect on the optical performance of blue InGaN light-emitting diodes. Particularly, the optical properties of the LED structures with the In 0.23Ga0.77N single quantum well, In0.20Ga 0.80N/In0.26Ga0.74N step-like quantum well, and In0.26Ga0.74N/In0.20Ga0.80N step-like quantum well are numerically investigated in detail. Simulation results show that the In0.20Ga0.80N/In 0.26Ga0.74N step-like-quantum-well LED structure has the best optical performance in virtue of the improvement in spatial overlap of electrons and holes in the quantum well.
UR - http://www.scopus.com/inward/record.url?scp=80052496925&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80052496925&partnerID=8YFLogxK
U2 - 10.1007/s00339-011-6458-1
DO - 10.1007/s00339-011-6458-1
M3 - Article
AN - SCOPUS:80052496925
VL - 104
SP - 621
EP - 626
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 2
ER -