Abstract
The concept of a step-like quantum well is proposed with the purpose to reduce the influence of electrostatic field resulting from the piezoelectric effect on the optical performance of blue InGaN light-emitting diodes. Particularly, the optical properties of the LED structures with the In 0.23Ga0.77N single quantum well, In0.20Ga 0.80N/In0.26Ga0.74N step-like quantum well, and In0.26Ga0.74N/In0.20Ga0.80N step-like quantum well are numerically investigated in detail. Simulation results show that the In0.20Ga0.80N/In 0.26Ga0.74N step-like-quantum-well LED structure has the best optical performance in virtue of the improvement in spatial overlap of electrons and holes in the quantum well.
| Original language | English |
|---|---|
| Pages (from-to) | 621-626 |
| Number of pages | 6 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 104 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2011 Aug 1 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
Fingerprint Dive into the research topics of 'Investigation of blue InGaN light-emitting diodes with step-like quantum well'. Together they form a unique fingerprint.
Cite this
Tsai, M. C., Yen, S. H., & Kuo, Y. K. (2011). Investigation of blue InGaN light-emitting diodes with step-like quantum well. Applied Physics A: Materials Science and Processing, 104(2), 621-626. https://doi.org/10.1007/s00339-011-6458-1