Investigation of band gaps and bowing parameters for zincblende III-nitride ternary alloys

Bo Ting Liou; Sheng Horng Yen; Yen Kuang Kuo

doi:10.1117/12.644464

Investigation of band gaps and bowing parameters for zincblende III-nitride ternary alloys

Bo Ting Liou, Sheng Horng Yen, Yen Kuang Kuo

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The zincblende In_xGa_1-xN, Al_xGa _1-xN, and Al_xIn_1-xN alloys are studied by numerical analysis based on first-principles calculations. The results show that the lattice constant of the three alloys obeys the Vegard's law. For In _xGa_1-xN the direct band gap bowing parameter obtained with the equilibrium lattice constant is 1.890 ± 0.097 eV. For Al _xGa_1-xN the direct and indirect bowing parameters of 0.574 ± 0.034 eV and 0.055 ± 0.038 eV are obtained, and there is a direct-indirect crossover near x = 0.56. For Al_xIn_1-xN the direct and indirect bowing parameters of 3.5694 ± 0.028 eV and 0.1953 ± 0.054 eV are obtained, and there is a direct-indirect crossover near x = 0.807.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices
Volume	6121
DOIs	https://doi.org/10.1117/12.644464
Publication status	Published - 2006 May 24
Event	Gallium Nitride Materials and Devices - San Jose, CA, United States Duration: 2006 Jan 23 → 2006 Jan 25

Other

Other	Gallium Nitride Materials and Devices
Country	United States
City	San Jose, CA
Period	06-01-23 → 06-01-25

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics

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@inproceedings{e696ff9aacf248c6b5baed170d2502f1,

title = "Investigation of band gaps and bowing parameters for zincblende III-nitride ternary alloys",

abstract = "The zincblende InxGa1-xN, AlxGa 1-xN, and AlxIn1-xN alloys are studied by numerical analysis based on first-principles calculations. The results show that the lattice constant of the three alloys obeys the Vegard's law. For In xGa1-xN the direct band gap bowing parameter obtained with the equilibrium lattice constant is 1.890 ± 0.097 eV. For Al xGa1-xN the direct and indirect bowing parameters of 0.574 ± 0.034 eV and 0.055 ± 0.038 eV are obtained, and there is a direct-indirect crossover near x = 0.56. For AlxIn1-xN the direct and indirect bowing parameters of 3.5694 ± 0.028 eV and 0.1953 ± 0.054 eV are obtained, and there is a direct-indirect crossover near x = 0.807.",

author = "Liou, {Bo Ting} and Yen, {Sheng Horng} and Kuo, {Yen Kuang}",

year = "2006",

month = may,

day = "24",

doi = "10.1117/12.644464",

language = "English",

isbn = "0819461636",

volume = "6121",

booktitle = "Gallium Nitride Materials and Devices",

note = "Gallium Nitride Materials and Devices ; Conference date: 23-01-2006 Through 25-01-2006",

}

TY - GEN

T1 - Investigation of band gaps and bowing parameters for zincblende III-nitride ternary alloys

AU - Liou, Bo Ting

AU - Yen, Sheng Horng

AU - Kuo, Yen Kuang

PY - 2006/5/24

Y1 - 2006/5/24

N2 - The zincblende InxGa1-xN, AlxGa 1-xN, and AlxIn1-xN alloys are studied by numerical analysis based on first-principles calculations. The results show that the lattice constant of the three alloys obeys the Vegard's law. For In xGa1-xN the direct band gap bowing parameter obtained with the equilibrium lattice constant is 1.890 ± 0.097 eV. For Al xGa1-xN the direct and indirect bowing parameters of 0.574 ± 0.034 eV and 0.055 ± 0.038 eV are obtained, and there is a direct-indirect crossover near x = 0.56. For AlxIn1-xN the direct and indirect bowing parameters of 3.5694 ± 0.028 eV and 0.1953 ± 0.054 eV are obtained, and there is a direct-indirect crossover near x = 0.807.

AB - The zincblende InxGa1-xN, AlxGa 1-xN, and AlxIn1-xN alloys are studied by numerical analysis based on first-principles calculations. The results show that the lattice constant of the three alloys obeys the Vegard's law. For In xGa1-xN the direct band gap bowing parameter obtained with the equilibrium lattice constant is 1.890 ± 0.097 eV. For Al xGa1-xN the direct and indirect bowing parameters of 0.574 ± 0.034 eV and 0.055 ± 0.038 eV are obtained, and there is a direct-indirect crossover near x = 0.56. For AlxIn1-xN the direct and indirect bowing parameters of 3.5694 ± 0.028 eV and 0.1953 ± 0.054 eV are obtained, and there is a direct-indirect crossover near x = 0.807.

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BT - Gallium Nitride Materials and Devices

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Y2 - 23 January 2006 through 25 January 2006

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