Abstract
The zincblende InxGa1-xN, AlxGa 1-xN, and AlxIn1-xN alloys are studied by numerical analysis based on first-principles calculations. The results show that the lattice constant of the three alloys obeys the Vegard's law. For In xGa1-xN the direct band gap bowing parameter obtained with the equilibrium lattice constant is 1.890 ± 0.097 eV. For Al xGa1-xN the direct and indirect bowing parameters of 0.574 ± 0.034 eV and 0.055 ± 0.038 eV are obtained, and there is a direct-indirect crossover near x = 0.56. For AlxIn1-xN the direct and indirect bowing parameters of 3.5694 ± 0.028 eV and 0.1953 ± 0.054 eV are obtained, and there is a direct-indirect crossover near x = 0.807.
Original language | English |
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Title of host publication | Gallium Nitride Materials and Devices |
Volume | 6121 |
DOIs | |
Publication status | Published - 2006 May 24 |
Event | Gallium Nitride Materials and Devices - San Jose, CA, United States Duration: 2006 Jan 23 → 2006 Jan 25 |
Other
Other | Gallium Nitride Materials and Devices |
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Country | United States |
City | San Jose, CA |
Period | 06-01-23 → 06-01-25 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics