Investigation of accumulated carrier mechanism on sulfurated GaN layers

Yow Jon Lin, Chi Sen Lee, Ching Ting Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The induced electron concentration accumulated on the sulfurated layer of the n-type GaN layers was studied using a simple resistance model. The electron concentration within the sulfurated layer was found to increase from its original value of 6.9×1017 cm-3 to 8.2×1019 cm-3. The induced electrons were due to the sulfur atoms occupying nitrogen vacancies.

Original languageEnglish
Pages (from-to)5321-5324
Number of pages4
JournalJournal of Applied Physics
Volume93
Issue number9
DOIs
Publication statusPublished - 2003 May 1

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electrons
nitrogen atoms
sulfur

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lin, Yow Jon ; Lee, Chi Sen ; Lee, Ching Ting. / Investigation of accumulated carrier mechanism on sulfurated GaN layers. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 9. pp. 5321-5324.
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Investigation of accumulated carrier mechanism on sulfurated GaN layers. / Lin, Yow Jon; Lee, Chi Sen; Lee, Ching Ting.

In: Journal of Applied Physics, Vol. 93, No. 9, 01.05.2003, p. 5321-5324.

Research output: Contribution to journalArticle

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