Intrinsic and extrinsic effects on performance limitation of AlGaAs/GaAs double-barrier resonant tunneling structures

J. S. Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu, D. C. Liou

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The performance limitations of negative differential resistance (NDR) in AlGaAs/GaAs double-barrier resonant tunneling structures (DBRTSs) have been investigated by varying the barrier thickness and quantum well (QW) width, and by doping In into the barrier layers. For devices with thick barriers (≥ 70 A ̊), the scattering in the material is believed to cause the saturation of the peak-to-valley current ratio (PVCR). The dependence of PVCR on the well width, however, is found to be, to the first-order, not related to the scattering mechanisms or other material properties. It is rather an inherent property of the tunneling process under different conditions. On the other hand, it was found that a proper amount of In doping into the barrier layers can increase the PVCR, because of the lower defect concentration, resulting in lower scattering rate in the active region.

Original languageEnglish
Pages (from-to)723-730
Number of pages8
JournalSolid State Electronics
Volume35
Issue number5
DOIs
Publication statusPublished - 1992 May

Fingerprint

Resonant tunneling
resonant tunneling
valleys
aluminum gallium arsenides
Scattering
barrier layers
scattering
Doping (additives)
Semiconductor quantum wells
Materials properties
quantum wells
saturation
Defects
causes
defects
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Wu, J. S. ; Lee, C. P. ; Chang, C. Y. ; Chang, K. H. ; Liu, D. G. ; Liou, D. C. / Intrinsic and extrinsic effects on performance limitation of AlGaAs/GaAs double-barrier resonant tunneling structures. In: Solid State Electronics. 1992 ; Vol. 35, No. 5. pp. 723-730.
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abstract = "The performance limitations of negative differential resistance (NDR) in AlGaAs/GaAs double-barrier resonant tunneling structures (DBRTSs) have been investigated by varying the barrier thickness and quantum well (QW) width, and by doping In into the barrier layers. For devices with thick barriers (≥ 70 A ̊), the scattering in the material is believed to cause the saturation of the peak-to-valley current ratio (PVCR). The dependence of PVCR on the well width, however, is found to be, to the first-order, not related to the scattering mechanisms or other material properties. It is rather an inherent property of the tunneling process under different conditions. On the other hand, it was found that a proper amount of In doping into the barrier layers can increase the PVCR, because of the lower defect concentration, resulting in lower scattering rate in the active region.",
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Intrinsic and extrinsic effects on performance limitation of AlGaAs/GaAs double-barrier resonant tunneling structures. / Wu, J. S.; Lee, C. P.; Chang, C. Y.; Chang, K. H.; Liu, D. G.; Liou, D. C.

In: Solid State Electronics, Vol. 35, No. 5, 05.1992, p. 723-730.

Research output: Contribution to journalArticle

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T1 - Intrinsic and extrinsic effects on performance limitation of AlGaAs/GaAs double-barrier resonant tunneling structures

AU - Wu, J. S.

AU - Lee, C. P.

AU - Chang, C. Y.

AU - Chang, K. H.

AU - Liu, D. G.

AU - Liou, D. C.

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AB - The performance limitations of negative differential resistance (NDR) in AlGaAs/GaAs double-barrier resonant tunneling structures (DBRTSs) have been investigated by varying the barrier thickness and quantum well (QW) width, and by doping In into the barrier layers. For devices with thick barriers (≥ 70 A ̊), the scattering in the material is believed to cause the saturation of the peak-to-valley current ratio (PVCR). The dependence of PVCR on the well width, however, is found to be, to the first-order, not related to the scattering mechanisms or other material properties. It is rather an inherent property of the tunneling process under different conditions. On the other hand, it was found that a proper amount of In doping into the barrier layers can increase the PVCR, because of the lower defect concentration, resulting in lower scattering rate in the active region.

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