Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions

Te Chung Wang, Tsung Shine Ko, Tien Chang Lu, Hao Chung Kuo, Run Ci Gao, Jenq Dar Tsay, Sing Chung Wang

Research output: Contribution to journalConference article

1 Citation (Scopus)


We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium compositions, we concluded that without piezoelectric field, high indium content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24% although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a-plane InGaN/GaN MQW while the indium composition about 30% so that the photoluminescence intensity of the sample 810°C low down and spectrum bandwidth broaden.

Original languageEnglish
Pages (from-to)2161-2163
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
Publication statusPublished - 2008 Dec 1
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sep 162007 Sep 21


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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