Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions

Te Chung Wang, Tsung Shine Ko, Tien Chang Lu, Hao Chung Kuo, Run Ci Gao, Jenq Dar Tsay, Sing Chung Wang

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium compositions, we concluded that without piezoelectric field, high indium content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24% although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a-plane InGaN/GaN MQW while the indium composition about 30% so that the photoluminescence intensity of the sample 810°C low down and spectrum bandwidth broaden.

Original languageEnglish
Pages (from-to)2161-2163
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sep 162007 Sep 21

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indium
quantum efficiency
quantum wells
light emitting diodes
bandwidth
photoluminescence

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Wang, Te Chung ; Ko, Tsung Shine ; Lu, Tien Chang ; Kuo, Hao Chung ; Gao, Run Ci ; Tsay, Jenq Dar ; Wang, Sing Chung. / Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2008 ; Vol. 5, No. 6. pp. 2161-2163.
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title = "Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions",
abstract = "We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium compositions, we concluded that without piezoelectric field, high indium content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24{\%} although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a-plane InGaN/GaN MQW while the indium composition about 30{\%} so that the photoluminescence intensity of the sample 810°C low down and spectrum bandwidth broaden.",
author = "Wang, {Te Chung} and Ko, {Tsung Shine} and Lu, {Tien Chang} and Kuo, {Hao Chung} and Gao, {Run Ci} and Tsay, {Jenq Dar} and Wang, {Sing Chung}",
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Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions. / Wang, Te Chung; Ko, Tsung Shine; Lu, Tien Chang; Kuo, Hao Chung; Gao, Run Ci; Tsay, Jenq Dar; Wang, Sing Chung.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 6, 01.12.2008, p. 2161-2163.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions

AU - Wang, Te Chung

AU - Ko, Tsung Shine

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Gao, Run Ci

AU - Tsay, Jenq Dar

AU - Wang, Sing Chung

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium compositions, we concluded that without piezoelectric field, high indium content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24% although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a-plane InGaN/GaN MQW while the indium composition about 30% so that the photoluminescence intensity of the sample 810°C low down and spectrum bandwidth broaden.

AB - We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium compositions, we concluded that without piezoelectric field, high indium content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24% although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a-plane InGaN/GaN MQW while the indium composition about 30% so that the photoluminescence intensity of the sample 810°C low down and spectrum bandwidth broaden.

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