Abstract
Interlayer dipolar coupling is an important aspect in magnetic switching devices from the application point of view. Here, we identify various sources affecting the interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions (pMTJs). By changing the MgO tunnel barrier layer thickness, we show that it plays a crucial role in controlling the dipolar coupling between the CoFeB reference and free layers and affects the magnetic properties of pMTJ. Moreover, changes in thickness of the bottom electrode layer affect the interlayer coupling strength and change the magnetic anisotropy of the free layer from perpendicular to in-plane direction. Furthermore, it is observed that the smaller the cell size of such MTJs, the more dominating the coupling strength which is formed by stray fields. These are some of the crucial parameters which need to be investigated during the device fabrication process for optimum device performance.
| Original language | English |
|---|---|
| Article number | 013902 |
| Journal | Journal of Applied Physics |
| Volume | 125 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2019 Jan 7 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions. / Bhatt, Ramesh Chandra; Ye, Lin Xiu; Chen, Wei Hsien; Lee, C. M.; Wu, Jong-Ching; Wu, Te Ho.
In: Journal of Applied Physics, Vol. 125, No. 1, 013902, 07.01.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions
AU - Bhatt, Ramesh Chandra
AU - Ye, Lin Xiu
AU - Chen, Wei Hsien
AU - Lee, C. M.
AU - Wu, Jong-Ching
AU - Wu, Te Ho
PY - 2019/1/7
Y1 - 2019/1/7
N2 - Interlayer dipolar coupling is an important aspect in magnetic switching devices from the application point of view. Here, we identify various sources affecting the interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions (pMTJs). By changing the MgO tunnel barrier layer thickness, we show that it plays a crucial role in controlling the dipolar coupling between the CoFeB reference and free layers and affects the magnetic properties of pMTJ. Moreover, changes in thickness of the bottom electrode layer affect the interlayer coupling strength and change the magnetic anisotropy of the free layer from perpendicular to in-plane direction. Furthermore, it is observed that the smaller the cell size of such MTJs, the more dominating the coupling strength which is formed by stray fields. These are some of the crucial parameters which need to be investigated during the device fabrication process for optimum device performance.
AB - Interlayer dipolar coupling is an important aspect in magnetic switching devices from the application point of view. Here, we identify various sources affecting the interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions (pMTJs). By changing the MgO tunnel barrier layer thickness, we show that it plays a crucial role in controlling the dipolar coupling between the CoFeB reference and free layers and affects the magnetic properties of pMTJ. Moreover, changes in thickness of the bottom electrode layer affect the interlayer coupling strength and change the magnetic anisotropy of the free layer from perpendicular to in-plane direction. Furthermore, it is observed that the smaller the cell size of such MTJs, the more dominating the coupling strength which is formed by stray fields. These are some of the crucial parameters which need to be investigated during the device fabrication process for optimum device performance.
UR - http://www.scopus.com/inward/record.url?scp=85059630493&partnerID=8YFLogxK
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U2 - 10.1063/1.5066372
DO - 10.1063/1.5066372
M3 - Article
AN - SCOPUS:85059630493
VL - 125
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 1
M1 - 013902
ER -