Interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions

Ramesh Chandra Bhatt, Lin Xiu Ye, Wei Hsien Chen, C. M. Lee, Jong-Ching Wu, Te Ho Wu

Research output: Contribution to journalArticle

Abstract

Interlayer dipolar coupling is an important aspect in magnetic switching devices from the application point of view. Here, we identify various sources affecting the interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions (pMTJs). By changing the MgO tunnel barrier layer thickness, we show that it plays a crucial role in controlling the dipolar coupling between the CoFeB reference and free layers and affects the magnetic properties of pMTJ. Moreover, changes in thickness of the bottom electrode layer affect the interlayer coupling strength and change the magnetic anisotropy of the free layer from perpendicular to in-plane direction. Furthermore, it is observed that the smaller the cell size of such MTJs, the more dominating the coupling strength which is formed by stray fields. These are some of the crucial parameters which need to be investigated during the device fabrication process for optimum device performance.

Original languageEnglish
Article number013902
JournalJournal of Applied Physics
Volume125
Issue number1
DOIs
Publication statusPublished - 2019 Jan 7

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tunnel junctions
interlayers
magnetic switching
barrier layers
tunnels
magnetic properties
anisotropy
fabrication
electrodes
cells

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Bhatt, Ramesh Chandra ; Ye, Lin Xiu ; Chen, Wei Hsien ; Lee, C. M. ; Wu, Jong-Ching ; Wu, Te Ho. / Interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions. In: Journal of Applied Physics. 2019 ; Vol. 125, No. 1.
@article{25cee4bbe67141cf9d004a57d0c1aa67,
title = "Interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions",
abstract = "Interlayer dipolar coupling is an important aspect in magnetic switching devices from the application point of view. Here, we identify various sources affecting the interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions (pMTJs). By changing the MgO tunnel barrier layer thickness, we show that it plays a crucial role in controlling the dipolar coupling between the CoFeB reference and free layers and affects the magnetic properties of pMTJ. Moreover, changes in thickness of the bottom electrode layer affect the interlayer coupling strength and change the magnetic anisotropy of the free layer from perpendicular to in-plane direction. Furthermore, it is observed that the smaller the cell size of such MTJs, the more dominating the coupling strength which is formed by stray fields. These are some of the crucial parameters which need to be investigated during the device fabrication process for optimum device performance.",
author = "Bhatt, {Ramesh Chandra} and Ye, {Lin Xiu} and Chen, {Wei Hsien} and Lee, {C. M.} and Jong-Ching Wu and Wu, {Te Ho}",
year = "2019",
month = "1",
day = "7",
doi = "10.1063/1.5066372",
language = "English",
volume = "125",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

Interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions. / Bhatt, Ramesh Chandra; Ye, Lin Xiu; Chen, Wei Hsien; Lee, C. M.; Wu, Jong-Ching; Wu, Te Ho.

In: Journal of Applied Physics, Vol. 125, No. 1, 013902, 07.01.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions

AU - Bhatt, Ramesh Chandra

AU - Ye, Lin Xiu

AU - Chen, Wei Hsien

AU - Lee, C. M.

AU - Wu, Jong-Ching

AU - Wu, Te Ho

PY - 2019/1/7

Y1 - 2019/1/7

N2 - Interlayer dipolar coupling is an important aspect in magnetic switching devices from the application point of view. Here, we identify various sources affecting the interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions (pMTJs). By changing the MgO tunnel barrier layer thickness, we show that it plays a crucial role in controlling the dipolar coupling between the CoFeB reference and free layers and affects the magnetic properties of pMTJ. Moreover, changes in thickness of the bottom electrode layer affect the interlayer coupling strength and change the magnetic anisotropy of the free layer from perpendicular to in-plane direction. Furthermore, it is observed that the smaller the cell size of such MTJs, the more dominating the coupling strength which is formed by stray fields. These are some of the crucial parameters which need to be investigated during the device fabrication process for optimum device performance.

AB - Interlayer dipolar coupling is an important aspect in magnetic switching devices from the application point of view. Here, we identify various sources affecting the interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions (pMTJs). By changing the MgO tunnel barrier layer thickness, we show that it plays a crucial role in controlling the dipolar coupling between the CoFeB reference and free layers and affects the magnetic properties of pMTJ. Moreover, changes in thickness of the bottom electrode layer affect the interlayer coupling strength and change the magnetic anisotropy of the free layer from perpendicular to in-plane direction. Furthermore, it is observed that the smaller the cell size of such MTJs, the more dominating the coupling strength which is formed by stray fields. These are some of the crucial parameters which need to be investigated during the device fabrication process for optimum device performance.

UR - http://www.scopus.com/inward/record.url?scp=85059630493&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059630493&partnerID=8YFLogxK

U2 - 10.1063/1.5066372

DO - 10.1063/1.5066372

M3 - Article

AN - SCOPUS:85059630493

VL - 125

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

M1 - 013902

ER -