Interference phenomena due to a double bend in a quantum wire

Jong-Ching Wu, M. N. Wybourne, W. Yindeepol, A. Weisshaar, S. M. Goodnick

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)


Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.

Original languageEnglish
Pages (from-to)102-104
Number of pages3
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 1991 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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