Abstract
Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.
| Original language | English |
|---|---|
| Pages (from-to) | 102-104 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 59 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1991 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Interference phenomena due to a double bend in a quantum wire. / Wu, Jong-Ching; Wybourne, M. N.; Yindeepol, W.; Weisshaar, A.; Goodnick, S. M.
In: Applied Physics Letters, Vol. 59, No. 1, 01.12.1991, p. 102-104.Research output: Contribution to journal › Article
TY - JOUR
T1 - Interference phenomena due to a double bend in a quantum wire
AU - Wu, Jong-Ching
AU - Wybourne, M. N.
AU - Yindeepol, W.
AU - Weisshaar, A.
AU - Goodnick, S. M.
PY - 1991/12/1
Y1 - 1991/12/1
N2 - Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.
AB - Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.
UR - http://www.scopus.com/inward/record.url?scp=0001556742&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0001556742&partnerID=8YFLogxK
U2 - 10.1063/1.105558
DO - 10.1063/1.105558
M3 - Article
AN - SCOPUS:0001556742
VL - 59
SP - 102
EP - 104
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
ER -