Interference phenomena due to a double bend in a quantum wire

Jong-Ching Wu; M. N. Wybourne; W. Yindeepol; A. Weisshaar; S. M. Goodnick

doi:10.1063/1.105558

Interference phenomena due to a double bend in a quantum wire

Jong-Ching Wu, M. N. Wybourne, W. Yindeepol, A. Weisshaar, S. M. Goodnick

Department of Physics

Research output: Contribution to journal › Article

71 Citations (Scopus)

Abstract

Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.

Original language	English
Pages (from-to)	102-104
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	1
DOIs	https://doi.org/10.1063/1.105558
Publication status	Published - 1991 Dec 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.105558

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Wu, J-C., Wybourne, M. N., Yindeepol, W., Weisshaar, A., & Goodnick, S. M. (1991). Interference phenomena due to a double bend in a quantum wire. Applied Physics Letters, 59(1), 102-104. https://doi.org/10.1063/1.105558

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