Interference phenomena due to a double bend in a quantum wire

Jong-Ching Wu, M. N. Wybourne, W. Yindeepol, A. Weisshaar, S. M. Goodnick

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Abstract

Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.

Original languageEnglish
Pages (from-to)102-104
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number1
DOIs
Publication statusPublished - 1991 Dec 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wu, J-C., Wybourne, M. N., Yindeepol, W., Weisshaar, A., & Goodnick, S. M. (1991). Interference phenomena due to a double bend in a quantum wire. Applied Physics Letters, 59(1), 102-104. https://doi.org/10.1063/1.105558