Abstract
Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.
Original language | English |
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Pages (from-to) | 102-104 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 59 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1991 Dec 1 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)