Interface modification of MoS                         2                         /SiO                         2                          leading to conversion of conduction type of MoS                         2

Yow Jon Lin; Ting Hong Su

doi:10.1016/j.apsusc.2016.06.147

Interface modification of MoS ₂ /SiO ₂ leading to conversion of conduction type of MoS ₂

Yow Jon Lin, Ting Hong Su

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Few-layer MoS ₂ prepared by the chemical vapor deposition method is deposited on SiO ₂ samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS ₂ . The MoS ₂ thin film deposited on a SiO ₂ substrate with sulfide treatment shows n-type behavior, whereas the MoS ₂ thin film deposited on a SiO ₂ substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO ₂ surface that results in the removal of oxygen dangling bonds and a change in the MoS ₂ [Formula presented]SiO ₂ interaction.

Original language	English
Pages (from-to)	661-665
Number of pages	5
Journal	Applied Surface Science
Volume	387
DOIs	https://doi.org/10.1016/j.apsusc.2016.06.147
Publication status	Published - 2016 Nov 30

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Lin, Y. J., & Su, T. H. (2016). Interface modification of MoS ₂ /SiO ₂ leading to conversion of conduction type of MoS ₂ Applied Surface Science, 387, 661-665. https://doi.org/10.1016/j.apsusc.2016.06.147

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title = " Interface modification of MoS 2 /SiO 2 leading to conversion of conduction type of MoS 2 ",

abstract = " Few-layer MoS 2 prepared by the chemical vapor deposition method is deposited on SiO 2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS 2 . The MoS 2 thin film deposited on a SiO 2 substrate with sulfide treatment shows n-type behavior, whereas the MoS 2 thin film deposited on a SiO 2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO 2 surface that results in the removal of oxygen dangling bonds and a change in the MoS 2 [Formula presented]SiO 2 interaction. ",

author = "Lin, {Yow Jon} and Su, {Ting Hong}",

year = "2016",

month = nov,

day = "30",

doi = "10.1016/j.apsusc.2016.06.147",

language = "English",

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journal = "Applied Surface Science",

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Lin, YJ & Su, TH 2016, ' Interface modification of MoS ₂ /SiO ₂ leading to conversion of conduction type of MoS ₂ ', Applied Surface Science, vol. 387, pp. 661-665. https://doi.org/10.1016/j.apsusc.2016.06.147

Interface modification of MoS ₂ /SiO ₂ leading to conversion of conduction type of MoS ₂ . / Lin, Yow Jon; Su, Ting Hong.

In: Applied Surface Science, Vol. 387, 30.11.2016, p. 661-665.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Interface modification of MoS 2 /SiO 2 leading to conversion of conduction type of MoS 2

AU - Lin, Yow Jon

AU - Su, Ting Hong

PY - 2016/11/30

Y1 - 2016/11/30

N2 - Few-layer MoS 2 prepared by the chemical vapor deposition method is deposited on SiO 2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS 2 . The MoS 2 thin film deposited on a SiO 2 substrate with sulfide treatment shows n-type behavior, whereas the MoS 2 thin film deposited on a SiO 2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO 2 surface that results in the removal of oxygen dangling bonds and a change in the MoS 2 [Formula presented]SiO 2 interaction.

AB - Few-layer MoS 2 prepared by the chemical vapor deposition method is deposited on SiO 2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS 2 . The MoS 2 thin film deposited on a SiO 2 substrate with sulfide treatment shows n-type behavior, whereas the MoS 2 thin film deposited on a SiO 2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO 2 surface that results in the removal of oxygen dangling bonds and a change in the MoS 2 [Formula presented]SiO 2 interaction.

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