Abstract
Few-layer MoS 2 prepared by the chemical vapor deposition method is deposited on SiO 2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS 2 . The MoS 2 thin film deposited on a SiO 2 substrate with sulfide treatment shows n-type behavior, whereas the MoS 2 thin film deposited on a SiO 2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO 2 surface that results in the removal of oxygen dangling bonds and a change in the MoS 2 [Formula presented]SiO 2 interaction.
| Original language | English |
|---|---|
| Pages (from-to) | 661-665 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 387 |
| DOIs | |
| Publication status | Published - 2016 Nov 30 |
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All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
Cite this
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Interface modification of MoS 2 /SiO 2 leading to conversion of conduction type of MoS 2 . / Lin, Yow-Jon; Su, Ting Hong.
In: Applied Surface Science, Vol. 387, 30.11.2016, p. 661-665.Research output: Contribution to journal › Article
TY - JOUR
T1 - Interface modification of MoS 2 /SiO 2 leading to conversion of conduction type of MoS 2
AU - Lin, Yow-Jon
AU - Su, Ting Hong
PY - 2016/11/30
Y1 - 2016/11/30
N2 - Few-layer MoS 2 prepared by the chemical vapor deposition method is deposited on SiO 2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS 2 . The MoS 2 thin film deposited on a SiO 2 substrate with sulfide treatment shows n-type behavior, whereas the MoS 2 thin film deposited on a SiO 2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO 2 surface that results in the removal of oxygen dangling bonds and a change in the MoS 2 [Formula presented]SiO 2 interaction.
AB - Few-layer MoS 2 prepared by the chemical vapor deposition method is deposited on SiO 2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS 2 . The MoS 2 thin film deposited on a SiO 2 substrate with sulfide treatment shows n-type behavior, whereas the MoS 2 thin film deposited on a SiO 2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO 2 surface that results in the removal of oxygen dangling bonds and a change in the MoS 2 [Formula presented]SiO 2 interaction.
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UR - http://www.scopus.com/inward/citedby.url?scp=84977618662&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2016.06.147
DO - 10.1016/j.apsusc.2016.06.147
M3 - Article
AN - SCOPUS:84977618662
VL - 387
SP - 661
EP - 665
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -