Interface modification of MoS 2 /SiO 2 leading to conversion of conduction type of MoS 2

Yow Jon Lin, Ting Hong Su

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Few-layer MoS 2 prepared by the chemical vapor deposition method is deposited on SiO 2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS 2 . The MoS 2 thin film deposited on a SiO 2 substrate with sulfide treatment shows n-type behavior, whereas the MoS 2 thin film deposited on a SiO 2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO 2 surface that results in the removal of oxygen dangling bonds and a change in the MoS 2 [Formula presented]SiO 2 interaction.

Original languageEnglish
Pages (from-to)661-665
Number of pages5
JournalApplied Surface Science
Volume387
DOIs
Publication statusPublished - 2016 Nov 30

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Interface modification of MoS <sub>2</sub> /SiO <sub>2</sub> leading to conversion of conduction type of MoS <sub>2</sub>'. Together they form a unique fingerprint.

  • Cite this