Interface modification of MoS 2 /SiO 2 leading to conversion of conduction type of MoS 2

Yow-Jon Lin, Ting Hong Su

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Few-layer MoS 2 prepared by the chemical vapor deposition method is deposited on SiO 2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS 2 . The MoS 2 thin film deposited on a SiO 2 substrate with sulfide treatment shows n-type behavior, whereas the MoS 2 thin film deposited on a SiO 2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO 2 surface that results in the removal of oxygen dangling bonds and a change in the MoS 2 [Formula presented]SiO 2 interaction.

Original languageEnglish
Pages (from-to)661-665
Number of pages5
JournalApplied Surface Science
Volume387
DOIs
Publication statusPublished - 2016 Nov 30

Fingerprint

Sulfides
Thin films
Dangling bonds
Substrates
Chemical vapor deposition
Oxygen

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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title = "Interface modification of MoS 2 /SiO 2 leading to conversion of conduction type of MoS 2",
abstract = "Few-layer MoS 2 prepared by the chemical vapor deposition method is deposited on SiO 2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS 2 . The MoS 2 thin film deposited on a SiO 2 substrate with sulfide treatment shows n-type behavior, whereas the MoS 2 thin film deposited on a SiO 2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO 2 surface that results in the removal of oxygen dangling bonds and a change in the MoS 2 [Formula presented]SiO 2 interaction.",
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Interface modification of MoS 2 /SiO 2 leading to conversion of conduction type of MoS 2 . / Lin, Yow-Jon; Su, Ting Hong.

In: Applied Surface Science, Vol. 387, 30.11.2016, p. 661-665.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interface modification of MoS 2 /SiO 2 leading to conversion of conduction type of MoS 2

AU - Lin, Yow-Jon

AU - Su, Ting Hong

PY - 2016/11/30

Y1 - 2016/11/30

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AB - Few-layer MoS 2 prepared by the chemical vapor deposition method is deposited on SiO 2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS 2 . The MoS 2 thin film deposited on a SiO 2 substrate with sulfide treatment shows n-type behavior, whereas the MoS 2 thin film deposited on a SiO 2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO 2 surface that results in the removal of oxygen dangling bonds and a change in the MoS 2 [Formula presented]SiO 2 interaction.

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