Few-layer MoS 2 prepared by the chemical vapor deposition method is deposited on SiO 2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS 2 . The MoS 2 thin film deposited on a SiO 2 substrate with sulfide treatment shows n-type behavior, whereas the MoS 2 thin film deposited on a SiO 2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si[Formula presented]O bonds and the formation of Si[Formula presented]S bonds at the SiO 2 surface that results in the removal of oxygen dangling bonds and a change in the MoS 2 [Formula presented]SiO 2 interaction.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films