Interface modification and trap-type transformation in Al-doped CdO/Si-nanowire arrays/p-type Si devices by nanowire surface passivation

Yow-Jon Lin, Wei Min Cho, Hsing Cheng Chang, Ya Hui Chen

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The present work reports the fabrication and detailed electrical properties of Al-doped CdO/Si-nanowire (SiNW) arrays/p-type Si Schottky diodes with and without SiNW surface passivation. It is shown that the interfacial trap states influence the electronic conduction through the device. The experimental results demonstrate that the effects of the dangling bonds at the SiNW surface and Si vacancies at the SiOx/SiNW interface which can be changed by the Si-O bonding on the energy barrier lowering and the charge transport property. The induced dominance transformation from electron traps to hole traps in the SiNWs by controlling the passivation treatment time is found in this study.

Original languageEnglish
Pages (from-to)213-218
Number of pages6
JournalCurrent Applied Physics
Volume15
Issue number3
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

Passivation
passivity
Nanowires
nanowires
traps
Hole traps
Electron transport properties
Electron traps
Dangling bonds
Energy barriers
Schottky diodes
Vacancies
Charge transfer
Diodes
Electric properties
transport properties
electrical properties
conduction
Fabrication
fabrication

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "The present work reports the fabrication and detailed electrical properties of Al-doped CdO/Si-nanowire (SiNW) arrays/p-type Si Schottky diodes with and without SiNW surface passivation. It is shown that the interfacial trap states influence the electronic conduction through the device. The experimental results demonstrate that the effects of the dangling bonds at the SiNW surface and Si vacancies at the SiOx/SiNW interface which can be changed by the Si-O bonding on the energy barrier lowering and the charge transport property. The induced dominance transformation from electron traps to hole traps in the SiNWs by controlling the passivation treatment time is found in this study.",
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Interface modification and trap-type transformation in Al-doped CdO/Si-nanowire arrays/p-type Si devices by nanowire surface passivation. / Lin, Yow-Jon; Cho, Wei Min; Chang, Hsing Cheng; Chen, Ya Hui.

In: Current Applied Physics, Vol. 15, No. 3, 01.01.2015, p. 213-218.

Research output: Contribution to journalArticle

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