Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy

Chia Lung Tsai, Yow Jon Lin, Jian Huang Lin

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5 Citations (Scopus)


The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/n-type GaN (graphene/p-type GaN) samples, the Schottky barrier height is 0.85 (2.50) eV. To determine the Fermi-level pinning/unpinning at the graphene/GaN interfaces, an analysis is conducted according to the Schottky–Mott limit. It is shown that the Fermi energy level is unpinned and the barrier-height value is dependent on the work function of graphene. Investigation of graphene/GaN interfaces is important, and providing the other technique for surface potential control is possible.

Original languageEnglish
Pages (from-to)3052-3056
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Issue number5
Publication statusPublished - 2015 May 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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