Abstract
The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/n-type GaN (graphene/p-type GaN) samples, the Schottky barrier height is 0.85 (2.50) eV. To determine the Fermi-level pinning/unpinning at the graphene/GaN interfaces, an analysis is conducted according to the Schottky–Mott limit. It is shown that the Fermi energy level is unpinned and the barrier-height value is dependent on the work function of graphene. Investigation of graphene/GaN interfaces is important, and providing the other technique for surface potential control is possible.
| Original language | English |
|---|---|
| Pages (from-to) | 3052-3056 |
| Number of pages | 5 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 26 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2015 May 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Tsai, C. L., Lin, Y. J., & Lin, J. H. (2015). Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy. Journal of Materials Science: Materials in Electronics, 26(5), 3052-3056. https://doi.org/10.1007/s10854-015-2796-7