Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy

Chia Lung Tsai, Yow Jon Lin, Jian Huang Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/n-type GaN (graphene/p-type GaN) samples, the Schottky barrier height is 0.85 (2.50) eV. To determine the Fermi-level pinning/unpinning at the graphene/GaN interfaces, an analysis is conducted according to the Schottky–Mott limit. It is shown that the Fermi energy level is unpinned and the barrier-height value is dependent on the work function of graphene. Investigation of graphene/GaN interfaces is important, and providing the other technique for surface potential control is possible.

Original languageEnglish
Pages (from-to)3052-3056
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume26
Issue number5
DOIs
Publication statusPublished - 2015 May 1

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Graphene
graphene
X ray photoelectron spectroscopy
photoelectron spectroscopy
x rays
Fermi level
Surface potential
Electron energy levels
energy levels

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/n-type GaN (graphene/p-type GaN) samples, the Schottky barrier height is 0.85 (2.50) eV. To determine the Fermi-level pinning/unpinning at the graphene/GaN interfaces, an analysis is conducted according to the Schottky–Mott limit. It is shown that the Fermi energy level is unpinned and the barrier-height value is dependent on the work function of graphene. Investigation of graphene/GaN interfaces is important, and providing the other technique for surface potential control is possible.",
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Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy. / Tsai, Chia Lung; Lin, Yow Jon; Lin, Jian Huang.

In: Journal of Materials Science: Materials in Electronics, Vol. 26, No. 5, 01.05.2015, p. 3052-3056.

Research output: Contribution to journalArticle

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