Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy

Chia Lung Tsai; Yow Jon Lin; Jian Huang Lin

doi:10.1007/s10854-015-2796-7

Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy

Chia Lung Tsai, Yow Jon Lin, Jian Huang Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/n-type GaN (graphene/p-type GaN) samples, the Schottky barrier height is 0.85 (2.50) eV. To determine the Fermi-level pinning/unpinning at the graphene/GaN interfaces, an analysis is conducted according to the Schottky–Mott limit. It is shown that the Fermi energy level is unpinned and the barrier-height value is dependent on the work function of graphene. Investigation of graphene/GaN interfaces is important, and providing the other technique for surface potential control is possible.

Original language	English
Pages (from-to)	3052-3056
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	26
Issue number	5
DOIs	https://doi.org/10.1007/s10854-015-2796-7
Publication status	Published - 2015 May 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Tsai, C. L., Lin, Y. J., & Lin, J. H. (2015). Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy. Journal of Materials Science: Materials in Electronics, 26(5), 3052-3056. https://doi.org/10.1007/s10854-015-2796-7

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10.1007/s10854-015-2796-7