Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy

Chia Lung Tsai; Yow Jon Lin; Jian Huang Lin

doi:10.1007/s10854-015-2796-7

Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy

Chia Lung Tsai, Yow Jon Lin, Jian Huang Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/n-type GaN (graphene/p-type GaN) samples, the Schottky barrier height is 0.85 (2.50) eV. To determine the Fermi-level pinning/unpinning at the graphene/GaN interfaces, an analysis is conducted according to the Schottky–Mott limit. It is shown that the Fermi energy level is unpinned and the barrier-height value is dependent on the work function of graphene. Investigation of graphene/GaN interfaces is important, and providing the other technique for surface potential control is possible.

Original language	English
Pages (from-to)	3052-3056
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	26
Issue number	5
DOIs	https://doi.org/10.1007/s10854-015-2796-7
Publication status	Published - 2015 May 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy",

abstract = "The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/n-type GaN (graphene/p-type GaN) samples, the Schottky barrier height is 0.85 (2.50) eV. To determine the Fermi-level pinning/unpinning at the graphene/GaN interfaces, an analysis is conducted according to the Schottky–Mott limit. It is shown that the Fermi energy level is unpinned and the barrier-height value is dependent on the work function of graphene. Investigation of graphene/GaN interfaces is important, and providing the other technique for surface potential control is possible.",

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AU - Tsai, Chia Lung

AU - Lin, Yow Jon

AU - Lin, Jian Huang

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N2 - The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/n-type GaN (graphene/p-type GaN) samples, the Schottky barrier height is 0.85 (2.50) eV. To determine the Fermi-level pinning/unpinning at the graphene/GaN interfaces, an analysis is conducted according to the Schottky–Mott limit. It is shown that the Fermi energy level is unpinned and the barrier-height value is dependent on the work function of graphene. Investigation of graphene/GaN interfaces is important, and providing the other technique for surface potential control is possible.

AB - The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/n-type GaN (graphene/p-type GaN) samples, the Schottky barrier height is 0.85 (2.50) eV. To determine the Fermi-level pinning/unpinning at the graphene/GaN interfaces, an analysis is conducted according to the Schottky–Mott limit. It is shown that the Fermi energy level is unpinned and the barrier-height value is dependent on the work function of graphene. Investigation of graphene/GaN interfaces is important, and providing the other technique for surface potential control is possible.

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