Interdiffusion effect on exchange coupling in annealing NiFe/FeMn and FeMn/NiFe systems

Kuang Ching Chen, Cheng Ta Yang, Y. H. Wu, Chao Hsien Huang, Kuo Ming Wu, Jong-Ching Wu, S. L. Young, Lance Horng

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The effect of interdiffusion on the exchange coupling field (H ex) and coercivity (Hc) in annealing NiFe/FeMn and FeMn/NiFe systems was investigated in the study. Type I samples: Silicon substrate/Ta/NiFe/FeMn/Ta and Type II samples: Silicon substrate/Ta/FeMn/NiFe/Ta were prepared. Annealing was carried out at 200 to 450°C for two hours under 720 Oe, respectively. The results show that the Hex and Hc in two types samples were dependent on the annealing temperature. For both types the magnetization loss ratio (AM/MS) is negative, which reflects a loss of magnetization associated with interfacial mixing caused by annealing. The magnetization loss ratio becomes larger when the annealing temperature increases. The exchange coupling of these two types samples is associated with interfacial diffusion between the NiFe and FeMn interface. The annealing treatment also affected the Hc. In these two types samples, the exchange coupling was improved from modification of the interface between layers by annealing. The extended annealing (above 375°C) changes the exchange coupling in these two types samples due to serious interdiffusion of the interface between NiFe and FeMn layers. It results in unwanted interdiffusion effects at the interface and a concomitant reduction in the exchange bias field.

Original languageEnglish
Pages (from-to)4372-4375
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1
EventInternational Symposium on Advanced Magnetic Materials and Appilications, (ISAMMA 2007) - Jeju, Korea, Republic of
Duration: 2007 May 282007 Jun 1

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annealing
magnetization
silicon
coercivity
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Chen, Kuang Ching ; Yang, Cheng Ta ; Wu, Y. H. ; Huang, Chao Hsien ; Wu, Kuo Ming ; Wu, Jong-Ching ; Young, S. L. ; Horng, Lance. / Interdiffusion effect on exchange coupling in annealing NiFe/FeMn and FeMn/NiFe systems. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2007 ; Vol. 4, No. 12. pp. 4372-4375.
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abstract = "The effect of interdiffusion on the exchange coupling field (H ex) and coercivity (Hc) in annealing NiFe/FeMn and FeMn/NiFe systems was investigated in the study. Type I samples: Silicon substrate/Ta/NiFe/FeMn/Ta and Type II samples: Silicon substrate/Ta/FeMn/NiFe/Ta were prepared. Annealing was carried out at 200 to 450°C for two hours under 720 Oe, respectively. The results show that the Hex and Hc in two types samples were dependent on the annealing temperature. For both types the magnetization loss ratio (AM/MS) is negative, which reflects a loss of magnetization associated with interfacial mixing caused by annealing. The magnetization loss ratio becomes larger when the annealing temperature increases. The exchange coupling of these two types samples is associated with interfacial diffusion between the NiFe and FeMn interface. The annealing treatment also affected the Hc. In these two types samples, the exchange coupling was improved from modification of the interface between layers by annealing. The extended annealing (above 375°C) changes the exchange coupling in these two types samples due to serious interdiffusion of the interface between NiFe and FeMn layers. It results in unwanted interdiffusion effects at the interface and a concomitant reduction in the exchange bias field.",
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Interdiffusion effect on exchange coupling in annealing NiFe/FeMn and FeMn/NiFe systems. / Chen, Kuang Ching; Yang, Cheng Ta; Wu, Y. H.; Huang, Chao Hsien; Wu, Kuo Ming; Wu, Jong-Ching; Young, S. L.; Horng, Lance.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 12, 01.12.2007, p. 4372-4375.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Interdiffusion effect on exchange coupling in annealing NiFe/FeMn and FeMn/NiFe systems

AU - Chen, Kuang Ching

AU - Yang, Cheng Ta

AU - Wu, Y. H.

AU - Huang, Chao Hsien

AU - Wu, Kuo Ming

AU - Wu, Jong-Ching

AU - Young, S. L.

AU - Horng, Lance

PY - 2007/12/1

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N2 - The effect of interdiffusion on the exchange coupling field (H ex) and coercivity (Hc) in annealing NiFe/FeMn and FeMn/NiFe systems was investigated in the study. Type I samples: Silicon substrate/Ta/NiFe/FeMn/Ta and Type II samples: Silicon substrate/Ta/FeMn/NiFe/Ta were prepared. Annealing was carried out at 200 to 450°C for two hours under 720 Oe, respectively. The results show that the Hex and Hc in two types samples were dependent on the annealing temperature. For both types the magnetization loss ratio (AM/MS) is negative, which reflects a loss of magnetization associated with interfacial mixing caused by annealing. The magnetization loss ratio becomes larger when the annealing temperature increases. The exchange coupling of these two types samples is associated with interfacial diffusion between the NiFe and FeMn interface. The annealing treatment also affected the Hc. In these two types samples, the exchange coupling was improved from modification of the interface between layers by annealing. The extended annealing (above 375°C) changes the exchange coupling in these two types samples due to serious interdiffusion of the interface between NiFe and FeMn layers. It results in unwanted interdiffusion effects at the interface and a concomitant reduction in the exchange bias field.

AB - The effect of interdiffusion on the exchange coupling field (H ex) and coercivity (Hc) in annealing NiFe/FeMn and FeMn/NiFe systems was investigated in the study. Type I samples: Silicon substrate/Ta/NiFe/FeMn/Ta and Type II samples: Silicon substrate/Ta/FeMn/NiFe/Ta were prepared. Annealing was carried out at 200 to 450°C for two hours under 720 Oe, respectively. The results show that the Hex and Hc in two types samples were dependent on the annealing temperature. For both types the magnetization loss ratio (AM/MS) is negative, which reflects a loss of magnetization associated with interfacial mixing caused by annealing. The magnetization loss ratio becomes larger when the annealing temperature increases. The exchange coupling of these two types samples is associated with interfacial diffusion between the NiFe and FeMn interface. The annealing treatment also affected the Hc. In these two types samples, the exchange coupling was improved from modification of the interface between layers by annealing. The extended annealing (above 375°C) changes the exchange coupling in these two types samples due to serious interdiffusion of the interface between NiFe and FeMn layers. It results in unwanted interdiffusion effects at the interface and a concomitant reduction in the exchange bias field.

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