Abstract
The effect of interdiffusion on the exchange coupling field (H ex) and coercivity (Hc) in annealing NiFe/FeMn and FeMn/NiFe systems was investigated in the study. Type I samples: Silicon substrate/Ta/NiFe/FeMn/Ta and Type II samples: Silicon substrate/Ta/FeMn/NiFe/Ta were prepared. Annealing was carried out at 200 to 450°C for two hours under 720 Oe, respectively. The results show that the Hex and Hc in two types samples were dependent on the annealing temperature. For both types the magnetization loss ratio (AM/MS) is negative, which reflects a loss of magnetization associated with interfacial mixing caused by annealing. The magnetization loss ratio becomes larger when the annealing temperature increases. The exchange coupling of these two types samples is associated with interfacial diffusion between the NiFe and FeMn interface. The annealing treatment also affected the Hc. In these two types samples, the exchange coupling was improved from modification of the interface between layers by annealing. The extended annealing (above 375°C) changes the exchange coupling in these two types samples due to serious interdiffusion of the interface between NiFe and FeMn layers. It results in unwanted interdiffusion effects at the interface and a concomitant reduction in the exchange bias field.
| Original language | English |
|---|---|
| Pages (from-to) | 4372-4375 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 4 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
| Event | International Symposium on Advanced Magnetic Materials and Appilications, (ISAMMA 2007) - Jeju, Korea, Republic of Duration: 2007 May 28 → 2007 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Interdiffusion effect on exchange coupling in annealing NiFe/FeMn and FeMn/NiFe systems. / Chen, Kuang Ching; Yang, Cheng Ta; Wu, Y. H.; Huang, Chao Hsien; Wu, Kuo Ming; Wu, Jong-Ching; Young, S. L.; Horng, Lance.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 12, 01.12.2007, p. 4372-4375.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Interdiffusion effect on exchange coupling in annealing NiFe/FeMn and FeMn/NiFe systems
AU - Chen, Kuang Ching
AU - Yang, Cheng Ta
AU - Wu, Y. H.
AU - Huang, Chao Hsien
AU - Wu, Kuo Ming
AU - Wu, Jong-Ching
AU - Young, S. L.
AU - Horng, Lance
PY - 2007/12/1
Y1 - 2007/12/1
N2 - The effect of interdiffusion on the exchange coupling field (H ex) and coercivity (Hc) in annealing NiFe/FeMn and FeMn/NiFe systems was investigated in the study. Type I samples: Silicon substrate/Ta/NiFe/FeMn/Ta and Type II samples: Silicon substrate/Ta/FeMn/NiFe/Ta were prepared. Annealing was carried out at 200 to 450°C for two hours under 720 Oe, respectively. The results show that the Hex and Hc in two types samples were dependent on the annealing temperature. For both types the magnetization loss ratio (AM/MS) is negative, which reflects a loss of magnetization associated with interfacial mixing caused by annealing. The magnetization loss ratio becomes larger when the annealing temperature increases. The exchange coupling of these two types samples is associated with interfacial diffusion between the NiFe and FeMn interface. The annealing treatment also affected the Hc. In these two types samples, the exchange coupling was improved from modification of the interface between layers by annealing. The extended annealing (above 375°C) changes the exchange coupling in these two types samples due to serious interdiffusion of the interface between NiFe and FeMn layers. It results in unwanted interdiffusion effects at the interface and a concomitant reduction in the exchange bias field.
AB - The effect of interdiffusion on the exchange coupling field (H ex) and coercivity (Hc) in annealing NiFe/FeMn and FeMn/NiFe systems was investigated in the study. Type I samples: Silicon substrate/Ta/NiFe/FeMn/Ta and Type II samples: Silicon substrate/Ta/FeMn/NiFe/Ta were prepared. Annealing was carried out at 200 to 450°C for two hours under 720 Oe, respectively. The results show that the Hex and Hc in two types samples were dependent on the annealing temperature. For both types the magnetization loss ratio (AM/MS) is negative, which reflects a loss of magnetization associated with interfacial mixing caused by annealing. The magnetization loss ratio becomes larger when the annealing temperature increases. The exchange coupling of these two types samples is associated with interfacial diffusion between the NiFe and FeMn interface. The annealing treatment also affected the Hc. In these two types samples, the exchange coupling was improved from modification of the interface between layers by annealing. The extended annealing (above 375°C) changes the exchange coupling in these two types samples due to serious interdiffusion of the interface between NiFe and FeMn layers. It results in unwanted interdiffusion effects at the interface and a concomitant reduction in the exchange bias field.
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U2 - 10.1002/pssc.200777349
DO - 10.1002/pssc.200777349
M3 - Conference article
VL - 4
SP - 4372
EP - 4375
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 12
ER -