InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition

T. S. Ko, T. C. Wang, R. C. Gao, Y. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang, H. G. Chen

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Abstract

The authors have used metal organic chemical vapor deposition to grow InGaNGaN multiple quantum well (MQW) nanostripes on trapezoidally patterned c -plane sapphire substrates. Transmission electron microscopy (TEM) images clearly revealed that the MQWs grew not only on the top faces of the trapezoids but also on both lateral side facets along the [0001] direction defined by the selected area electron diffraction pattern. Meanwhile, dislocations that stretched from the interfaces between the GaN and the substrates did not pass through the MQWs in the TEM observation. Microphotoluminescence measurements verified that the luminescence efficiency from a single nanostripe was enhanced by up to fivefold relative to those of regular thin film MQW structures. Observation of the cathodoluminescence identified the areas of light emission and confirmed that enhanced emission occurred from the nanostripes.

Original languageEnglish
Article number013110
JournalApplied Physics Letters
Volume90
Issue number1
DOIs
Publication statusPublished - 2007 Jan 15

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ko, T. S., Wang, T. C., Gao, R. C., Lee, Y. J., Lu, T. C., Kuo, H. C., Wang, S. C., & Chen, H. G. (2007). InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition. Applied Physics Letters, 90(1), [013110]. https://doi.org/10.1063/1.2430487