Influences of hetero-junction buffer layers and substrates on polarity of PA-MBE grown InN films

Jenn Chyuan Fan, Yun Yo Lo, Man-Fang Huang, Wei Chi Chen, Chien Chen Liu, C. M. Lee, Yu Chia Chiang

Research output: Contribution to journalArticle

Abstract

The polarity of InN films, grown on either GaN templates or sapphire substrates without and with various types of buffer layers using plasma-assisted molecular beam epitaxy, was investigated. From experimental results, we found that the polarity of InN films did not follow the polarity of GaN templates or GaN buffer layers and had different polarity behavior compared with PA-MBE grown GaN film. For InN films grown on Ga-polarity GaN template, they had N polarity either with or without GaN buffer layer. For InN films grown on high temperature annealed GaN buffer layer, they have In polarity due to lack of N-polarity nucleation sites. Similar results were found for InN films grown on sapphire substrates. We conclude that the polarity of InN film is independent on substrates but determined by growth nature, material characteristics of InN, and condition of heat treatment taken on buffer layers.

Original languageEnglish
Pages (from-to)2480-2485
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume26
Issue number4
DOIs
Publication statusPublished - 2015 Jan 1

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Buffer layers
Molecular beam epitaxy
polarity
buffers
Substrates
Aluminum Oxide
Sapphire
templates
sapphire
plasma layers
Nucleation
Heat treatment
Plasmas
heat treatment
molecular beam epitaxy
nucleation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Fan, Jenn Chyuan ; Lo, Yun Yo ; Huang, Man-Fang ; Chen, Wei Chi ; Liu, Chien Chen ; Lee, C. M. ; Chiang, Yu Chia. / Influences of hetero-junction buffer layers and substrates on polarity of PA-MBE grown InN films. In: Journal of Materials Science: Materials in Electronics. 2015 ; Vol. 26, No. 4. pp. 2480-2485.
@article{5e450cd5326248f7892c2bf34e4dee9b,
title = "Influences of hetero-junction buffer layers and substrates on polarity of PA-MBE grown InN films",
abstract = "The polarity of InN films, grown on either GaN templates or sapphire substrates without and with various types of buffer layers using plasma-assisted molecular beam epitaxy, was investigated. From experimental results, we found that the polarity of InN films did not follow the polarity of GaN templates or GaN buffer layers and had different polarity behavior compared with PA-MBE grown GaN film. For InN films grown on Ga-polarity GaN template, they had N polarity either with or without GaN buffer layer. For InN films grown on high temperature annealed GaN buffer layer, they have In polarity due to lack of N-polarity nucleation sites. Similar results were found for InN films grown on sapphire substrates. We conclude that the polarity of InN film is independent on substrates but determined by growth nature, material characteristics of InN, and condition of heat treatment taken on buffer layers.",
author = "Fan, {Jenn Chyuan} and Lo, {Yun Yo} and Man-Fang Huang and Chen, {Wei Chi} and Liu, {Chien Chen} and Lee, {C. M.} and Chiang, {Yu Chia}",
year = "2015",
month = "1",
day = "1",
doi = "10.1007/s10854-015-2709-9",
language = "English",
volume = "26",
pages = "2480--2485",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "4",

}

Influences of hetero-junction buffer layers and substrates on polarity of PA-MBE grown InN films. / Fan, Jenn Chyuan; Lo, Yun Yo; Huang, Man-Fang; Chen, Wei Chi; Liu, Chien Chen; Lee, C. M.; Chiang, Yu Chia.

In: Journal of Materials Science: Materials in Electronics, Vol. 26, No. 4, 01.01.2015, p. 2480-2485.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influences of hetero-junction buffer layers and substrates on polarity of PA-MBE grown InN films

AU - Fan, Jenn Chyuan

AU - Lo, Yun Yo

AU - Huang, Man-Fang

AU - Chen, Wei Chi

AU - Liu, Chien Chen

AU - Lee, C. M.

AU - Chiang, Yu Chia

PY - 2015/1/1

Y1 - 2015/1/1

N2 - The polarity of InN films, grown on either GaN templates or sapphire substrates without and with various types of buffer layers using plasma-assisted molecular beam epitaxy, was investigated. From experimental results, we found that the polarity of InN films did not follow the polarity of GaN templates or GaN buffer layers and had different polarity behavior compared with PA-MBE grown GaN film. For InN films grown on Ga-polarity GaN template, they had N polarity either with or without GaN buffer layer. For InN films grown on high temperature annealed GaN buffer layer, they have In polarity due to lack of N-polarity nucleation sites. Similar results were found for InN films grown on sapphire substrates. We conclude that the polarity of InN film is independent on substrates but determined by growth nature, material characteristics of InN, and condition of heat treatment taken on buffer layers.

AB - The polarity of InN films, grown on either GaN templates or sapphire substrates without and with various types of buffer layers using plasma-assisted molecular beam epitaxy, was investigated. From experimental results, we found that the polarity of InN films did not follow the polarity of GaN templates or GaN buffer layers and had different polarity behavior compared with PA-MBE grown GaN film. For InN films grown on Ga-polarity GaN template, they had N polarity either with or without GaN buffer layer. For InN films grown on high temperature annealed GaN buffer layer, they have In polarity due to lack of N-polarity nucleation sites. Similar results were found for InN films grown on sapphire substrates. We conclude that the polarity of InN film is independent on substrates but determined by growth nature, material characteristics of InN, and condition of heat treatment taken on buffer layers.

UR - http://www.scopus.com/inward/record.url?scp=84925532793&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925532793&partnerID=8YFLogxK

U2 - 10.1007/s10854-015-2709-9

DO - 10.1007/s10854-015-2709-9

M3 - Article

AN - SCOPUS:84925532793

VL - 26

SP - 2480

EP - 2485

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 4

ER -